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Microstructure and Strain Relaxation of Epitaxial SrRuO3 Films

Published online by Cambridge University Press:  02 July 2020

J. C. Jiang ,
X. Q. Pan ,
Q. Gan  and
C. B. Eom
J. C. Jiang
Affiliation:
Dept. of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, 48109
X. Q. Pan
Affiliation:
Dept. of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, 48109
Q. Gan
Affiliation:
Dept. of Mechanical Engineering and Materials Science, Duke University, Durham, NC, 27708
C. B. Eom
Affiliation:
Dept. of Mechanical Engineering and Materials Science, Duke University, Durham, NC, 27708
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Extract

It is widely believed that the stress in the epitaxial thin films, caused by the lattice mismatch between the thin film and substrate, has a strong influence on the properties. For example, lattice strained epitaxial thin films of SrRu03 grown on (001) SrTiO3 demonstrated magnetic and electrical properties different from those in bulk materials.1 In this paper, we report the effect of strain relaxation of the thin film on microstructure by means of transmission electron microscopy (TEM).

SrRuO3 thin film on a vicinal (001) SrTiO3, with a miscut angle 0.9° and miscut direction 5.7° away from the in-plane [100] axis, was grown by 90° off-axis sputtering. Cross-section and plan-view TEM specimens were prepared following the procedure described in Ref. 2. TEM investigations were conducted in a Philips CM 12 microscope in the EMAL at the University of Michigan.

X-ray diffraction studies of the as-grown SrRu03 thin film using a four-circle diffractometer showed that the film consists of a single [ 110]-type domain structure.

Type
Microscopy of Ceramics and Minerals
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 580 - 581
Copyright
Copyright © Microscopy Society of America

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References

References:

1.Gan, Q., Rao, R. A., Eom, C. B., Garrett, J. L., and Lee, M., Appl. Phys. Lett, (to be printed)Google Scholar
2.Jiang, J. C., Pan, X. Q. and Chen, C. L., Appl. Phys. Lett, (to be printed)Google Scholar