Hostname: page-component-5c6d5d7d68-tdptf Total loading time: 0 Render date: 2024-08-22T22:46:57.024Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructural Characterization of GaN on (0001) Sapphire

Published online by Cambridge University Press:  02 July 2020

Zhigang Mao ,
Matthew T. Johnson  and
C. Barry Carter
Zhigang Mao
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. S. E., Minneapolis, MN55455-0132
Matthew T. Johnson
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. S. E., Minneapolis, MN55455-0132
C. Barry Carter
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. S. E., Minneapolis, MN55455-0132
Get access

Extract

III-V nitrides grown on (0001) sapphire substrates often contain a very high density of defects; this high density is usually attributed to the poor lattice and thermal match between the nitride and the sapphire [1]. There is thus a need to understand the defect structures in these materials. In the present study, a microstructural characterization of MBE-grown GaN films on (0001) sapphire using various TEM techniques was performed to evaluate defect structures in this material. This paper will outline some of the different types of defects found in these films and suggest some possible mechanisms by which they were formed.

Type
Microscopy of Semiconducting and Superconducting Materials
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 628 - 629
Copyright
Copyright © Microscopy Society of America

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

References:

1.Strite, S. and Morkoc, H..J.Vac. Sci. Technol, B10(1992)1237CrossRefGoogle Scholar
2.Johnson, M. T., Mao, Z., and Carter, C. B.. Mat. Res. Soc. Symp. Proc, 482(1997), in pressGoogle Scholar
3. Funding for this research has been supplied by the NSF under contract DMR-9522253 and the AFOSR under contract AF/F 48620-95-1-0360. Ruediger Held and Professor Phil Cohen provided the GaN films. The authors acknowledge useful discussions with Dr. Paul Brown.Google Scholar