Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-26T18:25:15.288Z Has data issue: false hasContentIssue false
  • English
  • Français

The Mechanism of {113} Defect Formation in Silicon: Clustering of Interstitial–Vacancy Pairs Studied by In Situ High-Resolution Electron Microscope Irradiation

Published online by Cambridge University Press:  06 August 2013

Ludmila I. Fedina ,
Se Ahn Song ,
Andrey L. Chuvilin ,
Anton K. Gutakovskii  and
Alexander V. Latyshev
Ludmila I. Fedina
Affiliation:
Institute of Semiconductor Physics, pr. Lavrentjeva 13, Novosibirsk, 630090, Russia
Se Ahn Song*
Affiliation:
Quality Headquarters, Dongjin Semichen Co. Ltd., Hwaseong, 445-935, Korea
Andrey L. Chuvilin
Affiliation:
CIC nanoGUNE Consolider, Av. de Tolosa 76, 20018 San Sebastian, Spain
Anton K. Gutakovskii
Affiliation:
Institute of Semiconductor Physics, pr. Lavrentjeva 13, Novosibirsk, 630090, Russia
Alexander V. Latyshev
Affiliation:
Institute of Semiconductor Physics, pr. Lavrentjeva 13, Novosibirsk, 630090, Russia
*
*Corresponding author. E-mail: [email protected]
Get access

Abstract

We report the direct visualization of point defect clustering in {113} planes of silicon crystal using a transmission electron microscope, which was supported by structural modeling and high-resolution electron microscope image simulations. In the initial stage an accumulation of nonbonded interstitial–vacancy (I–V) pairs stacked at a distance of 7.68 Å along neighboring atomic chains located on the {113} plane takes place. Further broadening of the {113} defect across its plane is due to the formation of planar fourfold coordinated defects (FFCDs) perpendicular to chains accumulating I–V pairs. Closely packed FFCDs create a sequence of eightfold rings in the {113} plane, providing sites for additional interstitials. As a result, the perfect interstitial chains are built on the {113} plane to create an equilibrium structure. Self-ordering of point defects driven by their nonisotropic strain fields is assumed to be the main force for point defect clustering in the {113} plane under the existence of an energy barrier for their recombination.

Keywords

silicon {113} defectinterstitial–vacancy clusteringself-orderingfourfold coordinated defectsformation mechanismin situ HR-TEMdefect modelingHREM simulation
Type
Research Article
Information
Microscopy and Microanalysis , Volume 19 , Supplement S5: IUMAS , August 2013 , pp. 38 - 42
Copyright
Copyright © Microscopy Society of America 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Alippi, P. & Colombo, L. (2002). Lattice-strain field induced by {311} self-interstitial defects in silicon. Phys Rev B 62, 1815–1820.Google Scholar
Al-Mushadani, O.K. & Needs, R.J. (2003). Free-energy calculations of intrinsic point defects in silicon. Phys Rev B 68, 235205–235213.Google Scholar
Aseev, A., Fedina, L., Hoehl, D. & Barsch, H. (1994). Clusters of Interstitial Atoms in Silicon and Germanium. Berlin, Germany: Academy Verlag.Google Scholar
Chou, C.T., Cockayne, D.J.H., Zou, J., Kringhoj, P. & Jagadish, C. (1995). {111} defects in 1-MeV-silicon-ion-implanted silicon. Phys Rev B 52, 17223–17230.Google Scholar
Chuvilin, A. & Kaizer, U. (2005). On the peculiarities of CBED pattern formation revealed by multislice simulation. Ultramicroscopy 104, 73–82.Google Scholar
Fedina, L., Gutakovskii, A. & Aseev, A. (2000a). In situ HREM irradiation study of an intrinsic point defects clustering in FZ-Si. Cryst Res Technol 35, 775–786.Google Scholar
Fedina, L., Gutakovskii, A., Aseev, A., Van Landuyt, J. & Vanhellemont, J. (1997). The intrinsic point defect clustering in Si: A study by HVEM and HREM in situ electron irradiation. In In Situ Microscopy in Material Research, Gai, P. (Ed.), p. 63. Dordrecht: Kluwer.Google Scholar
Fedina, L., Gutakovskii, G., Aseev, A., Van Landuyt, J. & Vanhellemont, J. (1998). On the mechanism of {111}-defect formation in silicon studied by in situ electron irradiation in a high resolution electron microscope. Phil Mag A 77, 423–435.Google Scholar
Fedina, L., Gutakovskii, A., Aseev, A., Van Landuyt, J. & Vanhellemont, J. (1999). Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM. Phys Stat Sol (a) 171, 147–158.Google Scholar
Fedina, L., Lebedev, O.I., Van Tendeloo, G., Van Landuyt, J., Mironov, O.A. & Parker, E.H.C (2000b). In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures. Phys Rev B 61, 10336–10345.Google Scholar
Gargoni, F., Gatti, C.L. & Colombo, L. (1998). Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studies of self-diffusion, interstitial-vacancy recombination, and formation volumes. Phys Rev B 57, 170–177.Google Scholar
Gharaibeh, M., Estreicher, S.K., Fedders, P.A. & Ordejón, P. (2001). Self-interstitial-hydrogen complexes in silicon. Phys Rev B 64, 235211-1–235211-7.Google Scholar
Goedecker, S., Deutsch, T. & Billard, L. (2002). A fourfold coordinated point defect in silicon. Phys Rev Lett 88, 235501–235504.Google Scholar
Kim, J., Kirchhoff, F., Wilkins, J.W. & Khan, F.S. (2000). Stability of Si-interstitial defects: From point to extended defects. Phys Rev Lett 84, 503–506.Google Scholar
Kim, J., Wilkins, J.W., Khan, F.S. & Canning, A. (1997). Extended Si {311} defects. Phys Rev B 55, 16186–16197.Google Scholar
Leung, W.K., Needs, R.J., Rajagopal, G., Itoh, S. & Ihara, S. (1999). Calculations of silicon self-interstitial defects. Phys Rev Lett 83, 2351–2354.Google Scholar
Napolitani, E., Bisognin, G., Bruno, E., Mastromatteo, M., Scapellato, G.G., Boninelli, S., De Salvador, D., Mirabella, S., Spinella, C., Carnera, A. & Priolo, F. (2010). Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge. Appl Phys Lett 96, 201906–201909.Google Scholar
Ogut, S. & Chelikovsky, J.R. (2001). Ab initio investigation of point defects in bulk Si and Ge using a cluster method. Phys Rev B 64, 245206–245217.Google Scholar
Richie, D.A, Kim, J., Barr, S.A., Hazzard, K.R.A., Hennig, R. & Wilkins, J.W. (2004). Complexity of small silicon self-interstitial defects. Phys Rev Lett 92, 45501–45504.Google Scholar
Takeda, S. & Horiuchi, S. (1994). Electron diffraction channeling effect on defect formation in Si with 110 zone axis incidence. Ultramicroscopy 56, 144–162.Google Scholar
Takeda, S., Kohyama, M. & Ibe, K. (1994). Interstitial defects on {113} in Si and Ge: Line defect configuration incorporated with a self-interstitial atom chain. Phil Mag A 70, 287–312.Google Scholar
Tang, M., Colombo, L., Zhu, J. & Diaz de la Rubia, T. (1997). Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studies of self-diffusion, interstitial-vacancy recombination, and formation volumes. Phys Rev B 55, 14279–14289.Google Scholar
Watkins, G.D. (1976). EPR studies of lattice defects in semiconductors. In Defects and Their Structure in Non Metallic Solids. Henderson, B. & Hughes, A.E. (Eds.), p. 203. New York: Plenum Press.Google Scholar