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Measuring the minority carrier diffusion length in n-GaN using bulk STEM EBIC

Published online by Cambridge University Press:  01 August 2018

Zoey Warecki
Affiliation:
Department of Materials Science and Engineering, University of Maryland, College Park, MD, USA
Vladimir Oleshko
Affiliation:
Materials Science and Engineering Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, USA
Kimberlee Celio
Affiliation:
Sandia National Laboratories, Livermore, CA, USA
Andrew Armstrong
Affiliation:
Sandia National Laboratories, Albuquerque, NM, USA
Andrew Allerman
Affiliation:
Sandia National Laboratories, Albuquerque, NM, USA
A. Alec Talin
Affiliation:
Sandia National Laboratories, Albuquerque, NM, USA
John Cumings
Affiliation:
Department of Materials Science and Engineering, University of Maryland, College Park, MD, USA

Abstract

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Type
Abstract
Copyright
© Microscopy Society of America 2018 

References

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[5] The authors acknowledge funding from Nanostructures for Electrical Energy Storage (NEES), an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, the National Science Foundation Graduate Research Fellowship Program under Grant No. DGE 1322106, and support from NIST Grant No. 70NANB15H218. The work at SNL was funded in part by the Advanced Research Projects Agency - Energy (ARPA-E), U.S. Department of Energy, under the PNDIODES program, award 16-CJ000-10-04. Sandia National Laboratories is a multimission laboratory managed and operated by the National Technology and Engineering Solutions of Sandia, LLC., a wholly owned subsidiary of Honeywell International, Inc., for the U.S. Department of Energy's National Nuclear Security Administration under Contract DE-NA-0003525. ZW thanks Dr. Wen-An Chiou and Dr. Sz-Chian Liou for their advice..Google Scholar