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Limits of Analytical Accuracy for Two Critical Semiconductors Systems: (Al, Ga)(As, P) and (In, Ga)(As, P)

Published online by Cambridge University Press:  02 July 2020

John T. Armstrong
John T. Armstrong*
Affiliation:
Surface and Microanalysis Science Division, National Institute of Standards and Technology, Gaithersburg, MD, 20899
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Among the more important semiconductor materials, with commercially important applications in microelectronics, photonics, and nanodevice development are alloys in the system GaP-GaAs-AlAs- InAs (e.g., 1). These components have extensive regions of solid solution. With the wide variety of phases that can be grown in this system, it is possible to “tailor” heterojunctions that have desired band offsets or quantum wells that have a given shape of confinement potential, which is the basis of “bandgap engineering” (e.g., 2-4). In order to characterize the properties of these phases and maintain quality control in the manufacturing of devices utilizing these phases, it is critical to be able to perform accurate determinations of their compositions. This can be especially difficult, since many of the applications utilizing these phases involve micro- or nano-devices or thin multilayer coatings. In terms of the spatial analysis requirements, electron microbeam x-ray microanalysis is ideally suited for characterization of such specimens.

Type
Problem Elements and Spectrometry Problems in X-Ray Microanalysis
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 226 - 227
Copyright
Copyright © Microscopy Society of America

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