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Inversion Domain Boundaries in Ain and GaN Thin Films

Published online by Cambridge University Press:  02 July 2020

K. Dovidenko ,
S. Oktyabrsky  and
J. Narayan
K. Dovidenko
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695-7916
S. Oktyabrsky
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695-7916
J. Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695-7916
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High-resolution transmission electron microscopy (HRTEM), multislice image simulation and multiple dark field TEM imaging techniques have been used to investigate the structure of extended defects in AlN and GaN thin films grown on (0001) α-Al2O3 by metal-organic chemical vapor deposition (MOCVD). AlN layers were grown directly on the (0001) sapphire. In the case of GaN thin films, 300-500 Å AlN buffer was deposited first.

Cross-sectional TEM revealed the presence of domain boundaries in these Ill-nitride films. In this study we investigated these defects by multiple dark field imaging technique and proved some of them to be IDBs lying in planes. The multiple dark field images of several adjacent domains of AlN film are shown in Fig. 1 (a, b). The images were obtained exactly in [110] zone of AlN using (0002) and (000) reflections.

Type
Microscopy of Semiconducting and Superconducting Materials
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 636 - 637
Copyright
Copyright © Microscopy Society of America

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