Article contents
Interfaces and Defects in Opto-Electronic Semiconductor Films Studied by Atomic Resolution STEM
Published online by Cambridge University Press: 02 July 2020
Extract
The growth of thin films on dissimilar substrates is of great technological importance for modern optoelectronic devices. However, device applications are currently limited by lattice mismatches between the film and substrate that invariably lead to defects detrimental to device performance. It is therefore of key importance that the mechanisms leading to the formation of these defects are understood on the fundamental atomic level. Correlated atomic resolution Z-contrast imaging and EELS in the STEM is a unique methodology by which this information can be obtained. In this paper, the application of this methodology to determine a novel graphoepitaxial growth mechanism for CdTe on (001)Si is demonstrated, and its potential for the study of GaN is discussed.
Fig.la shows a high resolution Z-contrast image of a cross sectional view of the CdTe/Si interface showing clearly the CdTe and Si dumbbells. Due to the differences in atomic number, the location of the interface is clear.
- Type
- Recent Developments in Microscopy for Studying Electronic and Magnetic Materials
- Information
- Microscopy and Microanalysis , Volume 3 , Issue S2: Proceedings: Microscopy & Microanalysis '97, Microscopy Society of America 55th Annual Meeting, Microbeam Analysis Society 31st Annual Meeting, Histochemical Society 48th Annual Meeting, Cleveland, Ohio, August 10-14, 1997 , August 1997 , pp. 461 - 462
- Copyright
- Copyright © Microscopy Society of America 1997
References
- 1
- Cited by