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In-Situ Transformation of a Zinc Tem Lift-Out Specimen

Published online by Cambridge University Press:  02 July 2020

B.I. Prenitzer
Affiliation:
Advanced Materials Processing and Analysis Center, Mechanical Materials & Aerospace Engineering, University of Central Florida, 4000 Central Florida Blvd., Orlando, FL32816-2450.
S. Collins
Affiliation:
South Bay Technology East, 4019 S. 16th St., Arlington, VA22204
L. A. Giannuzzi
Affiliation:
Advanced Materials Processing and Analysis Center, Mechanical Materials & Aerospace Engineering, University of Central Florida, 4000 Central Florida Blvd., Orlando, FL32816-2450.
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Extract

The focused ion beam (FIB) lift out (LO) technique has been used to prepare transmission electron microscopy (TEM) specimens from individual Zn powder particles [1]. The Zn microstructure observed by TEM was compared to the Zn microstructure analyzed by traditional metallographic preparation techniques. It was concluded that the Ga focused ion milling produced no apparent microstructural damage to the Zn [1]. A low magnification TEM image of the FIB prepared Zn specimen obtained from a Philips EM430 operating at 300 KeV is shown in figure la.

The Zn FIB LO specimen was then processed in a plasma cleaner. After subjecting the Zn specimen to the plasma cleaning operation, the specimen was observed in a Philips EM400 operating at 120 KeV. The Zn specimen completely transformed during in situTEM observation at 120 KeV. The specimen was then subsequently observed in an EM430 to analyze the transformed Zn at 300 KeV.

Type
Specimen Preparation Poster Session
Copyright
Copyright © Microscopy Society of America

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References

1.Prenitzer, et al., Metallurgical and Materials Transactions A., SEP 01 (1998) v 29 n 9, P. 2399.CrossRefGoogle Scholar
2.Giannuzzi, et al., Microscopy Research and Technique, 41:285290 (1998).3.0.CO;2-Q>CrossRefGoogle ScholarPubMed
3. ASM Handbook, Alloy Phase Diagrams, Vol 3, ASM International p2.218 (1992).Google Scholar
4.Williams, and Carter, , Transmission Electron Microscopy, Plenum Press, NY (1996), p. 6165.CrossRefGoogle Scholar
5. BIP and LAG were supported by DOD NDSEG fellowship contract number P-34862-RT-NDF, NSF DMR #9703281, and the I4-UCF/Cirent Partnership. Special thanks go to Cirent Semiconductor for use of their facility.Google Scholar