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In-situ biasing and temperature influence on the electric fields across GaAs based p-n junction via 4D STEM
Published online by Cambridge University Press: 30 July 2021
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- New Frontiers in In-Situ Electron Microscopy in Liquids and Gases (L&G EM FIG Sponsored)
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- Copyright
- Copyright © The Author(s), 2021. Published by Cambridge University Press on behalf of the Microscopy Society of America
References
Shibata, N. et al. Imaging of built-in electric field at a p-n junction by scanning transmission electron microscopy. Sci Rep 5, (2015).Google Scholar
McCartney, M. R., Dunin-Borkowski, R. E. & Smith, D. J. Quantitative measurement of nanoscale electrostatic potentials and charges using off-axis electron holography: Developments and opportunities. Ultramicroscopy 203, 105–118 (2019).CrossRefGoogle ScholarPubMed
Twitchett, A. C., Dunin-Borkowski, R. E. & Midgley, P. A. Quantitative Electron Holography of Biased Semiconductor Devices. PHYSICAL REVIEW LETTERS 88, 4 (2002).Google ScholarPubMed
Anada, S. et al. Precise measurement of electric potential, field, and charge density profiles across a biased GaAs p-n tunnel junction by in situ phase-shifting electron holography. Journal of Applied Physics 122, 225702 (2017).CrossRefGoogle Scholar
Beyer, A. et al. Quantitative Characterization of Nanometer-Scale Electric Fields via Momentum-Resolved STEM. Nano Lett. (2021) doi:10.1021/acs.nanolett.0c04544.CrossRefGoogle ScholarPubMed
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