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In Situ REM Observation of Step Dynamics on Silicon Surfaces

Published online by Cambridge University Press:  02 July 2020

AV. Latyshev  and
K. Yagi
AV. Latyshev
Affiliation:
Physics Department, Tokyo Institute of Technology, Meguro, Tokyo152, Japan Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, 630090, Russia
K. Yagi
Affiliation:
Physics Department, Tokyo Institute of Technology, Meguro, Tokyo152, Japan
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Extract

Clear understanding of the structural and morphological transformations on the crystal surfaces can only be extracted from considerations of the dynamical properties of surface evolution. So ultra high vacuum reflection electron microscopy (UHV REM) has been applied to in situ studies of step behaviors on the silicon surfaces during various treatments. Dependence of the surface morphology on the number of parameters is reviewed with new results. Special attention is paid to influence of the electromigration phenomena and strain fields on structural evolution of the surfaces during sublimation, phase transition and epitaxial growth. The stability of the atomic step distributions is discussed in the frame of kinetical morphological transitions on silicon surfaces during DC heating of studied crystal [1].

The step motion during sublimation shows a strong influence of stress fields on the step configurations [2]. The importance of surface stress is obvious because in equilibrium conditions there is a residual stress on the surface due to existence of broken bonds.

Type
In Situ Studies in Microscopy
Information
Microscopy and Microanalysis , Volume 3 , Issue S2: Proceedings: Microscopy & Microanalysis '97, Microscopy Society of America 55th Annual Meeting, Microbeam Analysis Society 31st Annual Meeting, Histochemical Society 48th Annual Meeting, Cleveland, Ohio, August 10-14, 1997 , August 1997 , pp. 581 - 582
Copyright
Copyright © Microscopy Society of America 1997

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References

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