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In Situ Observation of Ferroelectric Domain Motion in BaTiO3

Published online by Cambridge University Press:  02 July 2020

A. Krishnan ,
M.E. Bisher  and
M.M.J. Treacy
A. Krishnan
Affiliation:
NEC Research Institute, Inc., 4 Independence Way, Princeton, NJ08540
M.E. Bisher
Affiliation:
NEC Research Institute, Inc., 4 Independence Way, Princeton, NJ08540
M.M.J. Treacy
Affiliation:
NEC Research Institute, Inc., 4 Independence Way, Princeton, NJ08540
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Extract

Ferroelectrics are used in many applications such as non-volatile memory, infrared detectors, phased array radar and optical switches. While substantial progress has been made in the development of commercial ferroelectric devices, we still do not possess a good understanding of the fundamental processes in ferroelectrics. Trapped charge and oxygen vacancies are believed to strongly influence domain motion. In order to study these issues, we have designed an in situ TEM holder that can subject ferroelectric crystals to voltage, heat and UV irradiation.

Bulk BaTi03 crystals, grown by the Remeika method, were mechanically polished and thinned in hot ophosphoric acid. The resulting thin flakes were attached to copper rings with conductive carbon paint and electrical wires were glued to the copper rings, which act as electrodes. The sample was placed in the cradle of the in situ TEM holder and examined in a Hitachi H9000NAR TEM.

Type
Future of Microscopy: Ceramics, Composites, and Cement
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 780 - 781
Copyright
Copyright © Microscopy Society of America

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References

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