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In SEM Study of Physical Properties of Semiconductor by Surface Electron Beam Exciting Potential

Published online by Cambridge University Press:  02 July 2020

Wenguo Hu ,
Shiqiu Zhu  and
E.I. Rau
Wenguo Hu
Affiliation:
Department of physics, Yunnan University, Kunming, 650091, China
Shiqiu Zhu
Affiliation:
Department of physics, Yunnan University, Kunming, 650091, China MSU, Moscow, Rusia
E.I. Rau
Affiliation:
Department of physics, Yunnan University, Kunming, 650091, China
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Abstract

In this paper, we apply a novel contactless method that we study to investigate the physical properties of the semiconductor materials. This method is based upon the measurement of the surface electron beam exciting potential (SEBEP) on the sample surface. Its advantages include: no direct sample contact or connection needed that is unlike the electron beam inducing current (EBIC) method; no potential barrier required from the measurement.

Electron probe irradiation can cause bending of the energy bands, variation of carriers and excitation of surface potential. The excited surface potential generates the SEBEP signal that can be detected by a SEBEP detector. It is necessary to emphasize that the electron beam can charge the surface that is under the oxide layer when it passes through the sample surface oxide layer.

It is known that the diffusion length L and the average lifetime τ of the non-equilibrium carries can be measured by other methods such as the cathodoluminescent method and the contacting method..

Type
Microscopy in the Real World: Semiconductors and Materials
Information
Microscopy and Microanalysis , Volume 7 , Issue S2: Proceedings: Microscopy & Microanalysis 2001, Microscopy Society of America 59th Annual Meeting, Microbeam Analysis Society 35th Annual Meeting, Long Beach, California August 5-9, 2001 , August 2001 , pp. 486 - 487
Copyright
Copyright © Microscopy Society of America 2001

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References

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3. This project is financed by State Science Technology Ministry of China and National Natural Science Foundation of China.Google Scholar