Electron channeling contrast imaging (ECCI), performed using a scanning electron microscope, has been used to observe dislocations in bulk TiAl with a duplex microstructure. The ECCI technique is based on the dependence of the back-scattered electron (BSE) yield (of the incident beam orientation) on the crystal lattice and defect orientation near the specimen surface. This allows nearsurface defects to be imaged in bulk specimens [1, 2]. ECCI was carried out in a Camscan 44FE FEG-SEM operated at 25 kV using a beam divergence of ∽8 mrad and a beam current of ∽ 2nA. Specimens were observed at a working distance of approximately 11 mm. To record the BSE signal, the microscope was fitted with an annular (four quadrant) silicon diode detector array attached to the final lens pole-piece, resulting in a solid angle collection of approximately ∽0.6 π str. Images were recorded as 32 frame averages using ∽1.1 frames/sec.