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High-Resolution Scanning Transmission Electron Microscopy Study of Black Spot Defects in Ion Irradiated Silicon Carbide

Published online by Cambridge University Press:  27 August 2014

Li He ,
Yizhang Zhai ,
Cheng Liu ,
Chao Jiang ,
Izabela Szlufarska ,
Beata Tyburska-Puschel ,
Kumar Sridharan  and
Paul Voyles
Li He
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, U.S.A.
Yizhang Zhai
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, U.S.A.
Cheng Liu
Affiliation:
Department of Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin, U.S.A.
Chao Jiang
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, U.S.A.
Izabela Szlufarska
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, U.S.A.
Beata Tyburska-Puschel
Affiliation:
Department of Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin, U.S.A.
Kumar Sridharan
Affiliation:
Department of Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin, U.S.A.
Paul Voyles
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, U.S.A.

Abstract

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Type
Abstract
Information
Microscopy and Microanalysis , Volume 20 , Supplement S3: Proceedings of Microscopy & Microanalysis 2014 , August 2014 , pp. 1824 - 1825
Copyright
Copyright © Microscopy Society of America 2014 

References

[1] Snead, Lance L., et al, Journal of Nuclear Materials 371 (2007), p. 329.Google Scholar
[2] Jiang, Chao, Morgan, Dane, Szlufarska, Izabela Physical Review B 86 (2012), 144118.Google Scholar
[3] This research is being performed using funding received from the DOE Office of Nuclear Energy’s Nuclear Energy University Programs under contract number CFP-12-3357.Google Scholar