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High-Resolution Electron Backscatter Diffraction in III-Nitride Semiconductors

Published online by Cambridge University Press:  23 September 2015

Arantxa Vilalta-Clemente
Affiliation:
Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom.
G. Naresh-Kumar
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom.
M. Nouf-Allehiani
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom.
Peter J. Parbrook
Affiliation:
Tyndall National Institute, University College Cork, "Lee Maltings", Cork, Ireland.
Emmanuel D.Le Boulbar
Affiliation:
Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, United Kingdom.
Duncan Allsopp
Affiliation:
Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, United Kingdom.
Philip A. Shields
Affiliation:
Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, United Kingdom.
Carol Trager-Cowan
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom.
Angus J. Wilkinson
Affiliation:
Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom.

Abstract

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Type
Abstract
Copyright
Copyright © Microscopy Society of America 2015 

References

References:

[1] Wilkinson, A J & Britton, T. B., Materials Today 15 (2012). p. 366.Google Scholar
[2] Wilkinson, A J, et al, Ultramicroscopy 106 (2006). p. 307.CrossRefGoogle Scholar
[3] Naresh-Kumar, G, et al, Phys. Rev. Lett. 108 (2012). p. 135503.Google Scholar
[4] The authors acknowledge funding from EPSRC grant No: EP/J015792/1 & EP/J016098/1.Google Scholar