Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-19T13:19:33.447Z Has data issue: false hasContentIssue false
  • English
  • Français

High Throughput in Advanced Sample Preparation

Published online by Cambridge University Press:  02 July 2020

Guy Shechter  and
Giorgio Riga
Guy Shechter
Affiliation:
Sagitta USA, Inc, 2910 Stevens Creek Blvd, San Jose, CA, 95128
Giorgio Riga
Affiliation:
Riga Analytical Lab, Inc, 3375 Scott Blvd, Santa Clara, CA, 95054
Get access

Extract

As the semiconductor industry paces toward 0.15-micron feature size and below, the visibility of structures becomes a challenge. As a result, the use of higher precision metrology equipment such as FESEM, STEM, TEM and SCM becomes a necessity. TEM analysis today is a less common methodology of analysis. This is due to the time and effort required for the analysis as well as the difficulty of the sample preparation. This publication will share the experience gained in sample preparation for challenging applications such as STEM, TEM and SCM. The main driver will be the focus on short turnover time and high success rates.

In order to perform high-resolution analysis, samples should be transparent to electrons. Optimal thickness would be in the range of 20 to 120 nm (1). Pre-preparation of sample for advanced imaging will determine the final step method required. We used the automated polishing technique for sample preparation and reached 1 to 2 micron thickness.

Type
Specimen Preparation Techniques for Materials Sciences
Information
Microscopy and Microanalysis , Volume 6 , Issue S2: Proceedings: Microscopy & Microanalysis 2000, Microscopy Society of America 58th Annual Meeting, Microbeam Analysis Society 34th Annual Meeting, Microscopical Society of Canada/Societe de Microscopie de Canada 27th Annual Meeting, Philadelphia, Pennsylvania August 13-17, 2000 , August 2000 , pp. 494 - 495
Copyright
Copyright © Microscopy Society of America

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

References:

1.Tsuji, S. et al, Cross-sectional characterization of thin-film transistors with transmission electron microscopy, American Vacuum Society 1995.CrossRefGoogle Scholar
2.Edwards, Hal et al, Scanning Capacitance Spectroscopy: An analytical technique for pn-junction delineation in Si devices, Applied Physics letters, Volume 72 number 6, 1998.Google Scholar
3.McCAFFREY, J.P. et al, Use of transmitted color to calibrate thickness of silicon wafers, Micron Vol. 27/6 1996.Google Scholar
4. The help of Dr. Hal Edwards and Mr. David Woodall of Texas Instruments, Dr. David Susnitsky and Mr. Guri Basat is deeply appreciated.Google Scholar