Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-23T07:34:18.474Z Has data issue: false hasContentIssue false
  • English
  • Français

High Resolution EELS of Point Defects in a Nitride Semiconductor Material

Published online by Cambridge University Press:  01 August 2018

Katia March ,
Shuo Wang ,
Fernando A. Ponce  and
Peter Rez
Katia March
Affiliation:
Eyring Materials Center, OKED, Arizona State University, Tempe, AZ.
Shuo Wang
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ.
Fernando A. Ponce
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ.
Peter Rez
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ.

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Information
Microscopy and Microanalysis , Volume 24 , Supplement S1: Proceedings of Microscopy & Microanalysis 2018 , August 2018 , pp. 430 - 431
Copyright
© Microscopy Society of America 2018 

References

[1] Wang, S., et al, J. Cryst. Growth 475 2017) p. 334.Google Scholar
[2] The use of facilities within the Eyring Materials Center at Arizona State University is acknowledged. X. Li, T. Detchprohm and R.D. Dupuis are acknowledged for growing the materials.Google Scholar