Silicon carbide is a versatile material possessing properties such as a wide energy bandgap, high thermal conductivity, high elastic modulus and high-temperature creep resistance, which enable it to be used in a variety of electronic, optical and structural applications. Chemical vapor infiltration/deposition (CVI/CVD) coupled with the application of a temperature gradient and forced flow of reagents is particularly suited to the production of SiC structural composites due to the benefits of reduced infiltration time and uniform composite density. In this work, the growth and orientation of polycrystalline SiC on graphite during CVI is investigated using TEM and HRTEM.

The composites studied possess a laminated matrix of alternating layers of carbon and SiC which were deposited by alternating the reagent streams from one layer to the next. Specimens for TEM examination were obtained by cutting ∽1 mm thickness slices from the bulk sample with a low speed diamond saw.