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Grain Boundary Structure Analysis of Covalent Bonding Materials by Atomic Resolution Transmission Electron Microscopy

Published online by Cambridge University Press:  02 July 2020

Hideki Ichinose
Affiliation:
Department of Materials Science, School of Eng., University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-0033, Japan
Hidetaka Sawada
Affiliation:
Department of Materials Science, School of Eng., University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-0033, Japan
Eriko Takuma
Affiliation:
Department of Materials Science, School of Eng., University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-0033, Japan
Hideo Saito
Affiliation:
Department of Materials Science, School of Eng., University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-0033, Japan
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Abstract

Grain boundaries of covalent bonding materials such as silicon, germanium and SiC require rather physical consideration than that of geometry to discuss the result of their electron microscopic observation. Dangling bond, for example, is expected least in number in the stable boundary (least dangling bond rule). [1][2] in practice, further precise consideration must be done both in geometry and in physics in the covalent bonding materials boundary. in the present study, geometrical discussion is combined together with that of the atomic bonding about diamond, SiC and ZnO grain boundaries. Chemical structure image of the modern high-voltage transmission electron microscope enabled to do it. An asymmetrical Σ3 boundary of diamond and a 6H-SiC boundary with 70.5 degree rotation are mainly observed.

The sliced specimen, 0.3mm in thickness, was mechanically thinned down to 0.02 mm and was finally polished using an argon ion milling. Final thickness of the specimen was estimated to be 3 nm in the region close to the edge of the small hole.

Type
Quantitative Transmission Electron Microscopy of Interfaces (Organized by M. Rüehle, Y. Zhu and U. Dahmen)
Copyright
Copyright © Microscopy Society of America 2001

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References

References:

(1)Ichinose, H., Inomata, Y. and Ishida, Y., Ceramic Microstructure-Role of Interfaces(Plenum Pub. Co., 1988) pp.256.Google Scholar
(2)Inomata, Y., Mitomo, M., Inoue, Z. and Tanaka, H., Yogyo-Kyokai-Shi, 77, 24 (1969).Google Scholar
(3)Ichinose, H., Sawada, H., Takuma, E. and Osaki, M., J. Electron Microscopy, 48, 887 (1999).CrossRefGoogle Scholar