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Focused Ion Beam Interfaced with a 200 keV Transmission Electron Microscope for In Situ Micropatterning on Semiconductors

Published online by Cambridge University Press:  28 July 2005

Miyoko Tanaka ,
Kazuo Furuya  and
Tetsuya Saito
Miyoko Tanaka
Affiliation:
High Resolution Beam Research Station, National Research Institute for Metals, 1-2-1 Sengen, Tsukuba, Ibaraki 305, Japan
Kazuo Furuya
Affiliation:
High Resolution Beam Research Station, National Research Institute for Metals, 1-2-1 Sengen, Tsukuba, Ibaraki 305, Japan
Tetsuya Saito
Affiliation:
High Resolution Beam Research Station, National Research Institute for Metals, 1-2-1 Sengen, Tsukuba, Ibaraki 305, Japan
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Abstract

A focused ion beam (FIB) interface attached to a column of 200 keV transmission electron microscope (TEM) was developed for in situ micropatterning to semiconductors. TEM specimens of Si and GaAs, and those of a thin Ni2Si layer on a Si substrate were micromilled in the TEM during observation. A set of 6 x 6-um squares and alphabet letters were patterned with a 25 keV Ga+-FIB of 0.2-μm beam diameter at room temperature. The effect of FIB irradiation on the structural evolution was observed simultaneously by a TV-rate video camera and sequentially by regular film. FIB micropatterning to semiconductor specimens caused amorphization and Ga injection. The excess Ga in the specimens precipitated as metastable solid γ-phase for Si and as liquid phase for GaAs. Ni2Si/Si specimens lost silicide crystallinity after FIB patterning. Annealing of these bilayer specimens at 673K resulted in the precipitation of Ni-rich silicide.

Keywords

transmission electron microscopyfocused ion beamin situ observationmicropatterningbeam broadeningSiGaAsNi silicideradiation-induced precipitates
Type
1998 ASU ELECTRON MICROSCOPY WORKSHOP
Information
Microscopy and Microanalysis , Volume 4 , Issue 3 , June 1998 , pp. 207 - 217
Copyright
© 2005 Microscopy Society of America

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