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Fine Structural Studies of AlGaN Laser Heterostructures with Digitally Alloyed Quantum Wells Grown on c-Al2O3 by plasma-Assisted Molecular Beam Epitaxy

Published online by Cambridge University Press:  27 August 2014

V.N. Jmerik ,
D.V. Nechaev ,
S.V. Ivanov  and
S. Rouvimov
V.N. Jmerik
Affiliation:
Ioffe Physical-Technical Institute, 194021, 26 Politekhnicheskaya str., St.-Petersburg,Russia
D.V. Nechaev
Affiliation:
Ioffe Physical-Technical Institute, 194021, 26 Politekhnicheskaya str., St.-Petersburg,Russia
S.V. Ivanov
Affiliation:
Ioffe Physical-Technical Institute, 194021, 26 Politekhnicheskaya str., St.-Petersburg,Russia
S. Rouvimov
Affiliation:
University of Notre Dame, Notre Dame, Indiana 46556, USA

Abstract

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Type
Abstract
Information
Microscopy and Microanalysis , Volume 20 , Supplement S3: Proceedings of Microscopy & Microanalysis 2014 , August 2014 , pp. 80 - 81
Copyright
Copyright © Microscopy Society of America 2014 

References

[1] Duboz, J-Y and Garcia, J-C in Low-Dimensional Nitride Semiconductors, edited by B. Gil, Oxford University press (2002, Oxford) chapter 1.Google Scholar
[2] Jmerik, V.N., Lutsenko, E.V., Ivanov, S.V. Phys. Status Solidi A210 (2013) 439.Google Scholar
[3] Nechaev, D.V., Aseev, P.A., Jmerik, V.N., Brunkov, P.N., Kuznetsova, Ya.V., Sitnikova, A.A., Ratnikov, V.V., Ivanov, S.V. J. Cryst. Growth 378 (2013) 319.Google Scholar