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ESEM Imaging of P-N Junctions Using a Gaseous Secondary ElectronDetector

Published online by Cambridge University Press:  02 July 2020

M.R. Phillips ,
M. Toth  and
D. Drouin
M.R. Phillips
Affiliation:
Microstructural Analysis Unit, University of Technology, Sydney PO Box 123, Broadway, NSW, 2007 Australia, [email protected]
M. Toth
Affiliation:
Microstructural Analysis Unit, University of Technology, Sydney PO Box 123, Broadway, NSW, 2007 Australia, [email protected]
D. Drouin
Affiliation:
Départment de génie electrique et génie informatique, Université de Sherbrooke, Sherbrooke, Québec, Canada, J1K 2R1
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Contrast in secondary electron images of p-n junctions has been observed using a FESEM operating at 1kV. This contrast has been attributed to energy band-bending effects and dopant level variations. In this paper, we report that contrast from the depletion layer of a p-n junction can be obtained in an ESEM using a gaseous secondary electron detector (GSED). The contrast is caused by a signal induced in the GSED by charging and discharging of the device.

A 1N4002 p+pn silicon power diode was cross-sectioned along the lead axis to expose the Ag ohmic contacts and the semiconductor device. The section was mechanically polished to an optical finish using diamond abrasives and mounted in a holder which allowed electrical connection to both the p and n sides of the diode. Imaging experiments were performed in a Philips Electroscan XL30 ESEM and a JEOL 6300F below-lens FESEM. Current images were obtained with a GW Electronics 103 specimen current amplifier.

Type
Environmental Scanning Electron Microscopy and Other Wet Work
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 288 - 289
Copyright
Copyright © Microscopy Society of America

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References

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