Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-19T11:11:42.673Z Has data issue: false hasContentIssue false

Epitaxial Platinum Films on (0001) Sapphire: a Microstructural Study

Published online by Cambridge University Press:  02 July 2020

S. Ramanathan
Affiliation:
Department of Materials Science & Engineering, Stanford University, Stanford, CA94305
B.M. Clemens
Affiliation:
Department of Materials Science & Engineering, Stanford University, Stanford, CA94305
P.C. Mclntyre
Affiliation:
Department of Materials Science & Engineering, Stanford University, Stanford, CA94305
U. Dahmen
Affiliation:
National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, CA94720
Get access

Extract

Epitaxial platinum films are used as seed layers in a number of magnetic and ferroelectric devices. It is hence very important to understand the microstructure of the seed layer to control the subsequent multilayer growth. Previous studies of epitaxial Pt films have focused on AFM, XRD and RHEED measurements. However, there has been no detailed analysis of the microstructure as of yet. In this paper, we present results of a systematic study of the microstructure of epitaxial Pt films using conventional and high resolution transmission electron microscopy.

Platinum films were grown by sputtering in an UHV chamber at 500°C on (0001) sapphire. Figure 1 shows a plan view bright field image of a Pt film with the inset showing the <111> diffraction pattern. The spot pattern confirms the epitaxial nature of the film.

Type
Films and Coatings
Copyright
Copyright © Microscopy Society of America

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

References:

1.Farrow, R.F.C. et al., J. Cryst. Growth, 133 (1993)47CrossRefGoogle Scholar
2.Hildner, M.L., Minvielle, T.J. and Wilson, R.J., Surf. Sci., 396 (1998) 16CrossRefGoogle Scholar
3. E.E, Underwood, Quantitative StereologyGoogle Scholar
4.Guo, J., Chang, H.L.M. and Lam, D.J., Appl. Phy. Lett., 61 (1992) 3116CrossRefGoogle Scholar
5.Verdozzi, C. et al., Phy. Rev. Lett., 82 (1999) 799CrossRefGoogle Scholar
6. Financial support from NSF through the Stanford Center for Materials Research is gratefully acknowledged. This research was supported in part by DOE under contract No. DE-ACO3-76SFOOO98 S.R. is grateful to NCEM, LBNL for a Summer Fellowship and their staff members for invaluable help and suggestions.Google Scholar