Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-17T22:21:49.325Z Has data issue: false hasContentIssue false
  • English
  • Français

Energy -Loss Fine Structures at the Si-Gd2O3, Interface

Published online by Cambridge University Press:  02 July 2020

G.A. Botton ,
J. A. Gupta ,
D. Landheer ,
J.P. McCaffrey ,
G.I. Sproule  and
M.J. Graham
G.A. Botton
Affiliation:
Materials Technology Lab., Natural Resources Canada, 568 Booth St., Ottawa, , KlA 0G1, Canada
J. A. Gupta
Affiliation:
Institute of Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, Canada.
D. Landheer
Affiliation:
Institute of Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, Canada.
J.P. McCaffrey
Affiliation:
Institute of Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, Canada.
G.I. Sproule
Affiliation:
Institute of Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, Canada.
M.J. Graham
Affiliation:
Institute of Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, Canada.
Get access

Abstract

In recent years, electron energy loss spectroscopy has provided high spatial resolution information on the elemental composition of interfacial reactions. with the use of field emission guns in conventional TEM or STEM, additional information on the chemical, structural and electronic state at grain boundaries and interfaces can also be obtained (e.g. Ref. 1 and 2). in the study of new types of materials for semiconductor applications such as high-K dielectrics, high spatial resolution information of this type is of critical importance as the dimensions of the structures are reduced and the ultimate electronic properties become size dependent. This paper discusses the analysis of near edge structure information obtained at the Si-Gd2O3 interface, a system with great potential for the next generation of gate material.

The preparation of the thin films and the sample preparation details are given elsewhere3 and only a summary of the characterization method and results are described here.

Type
Quantitative Transmission Electron Microscopy of Interfaces (Organized by M. Rüehle, Y. Zhu and U. Dahmen)
Information
Microscopy and Microanalysis , Volume 7 , Issue S2: Proceedings: Microscopy & Microanalysis 2001, Microscopy Society of America 59th Annual Meeting, Microbeam Analysis Society 35th Annual Meeting, Long Beach, California August 5-9, 2001 , August 2001 , pp. 302 - 303
Copyright
Copyright © Microscopy Society of America 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Scheu, C., et al. Micr. Microanal. 6 (Supp.2: proceedings), 182, (2000).CrossRefGoogle Scholar
2.Muller, D.A. et al. Nature, 399, 758 (1999).CrossRefGoogle Scholar
3.Botton, G.A. et al. Submitted.Google Scholar
4.Bentley, J. et al. Micr. Microanal. 6 (Supp.2: proceedings), 154, (2000).CrossRefGoogle Scholar
5.Pankhurst, D.A. et al., Phys. Rev. B. Accepted for publication.Google Scholar