Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-23T09:54:41.152Z Has data issue: false hasContentIssue false
  • English
  • Français

Electron-Beam-Induced Carbon Contamination on Silicon: Characterization Using Raman Spectroscopy and Atomic Force Microscopy

Published online by Cambridge University Press:  24 December 2009

Deborah Lau ,
Anthony E. Hughes ,
Tim H. Muster ,
Timothy J. Davis  and
A. Matthew Glenn
Deborah Lau*
Affiliation:
CSIRO Materials Science & Engineering, Private Bag 33, Clayton South, Victoria 3169, Australia CSIRO Future Manufacturing Flagship, Gate 5 Normanby Road, Clayton, Victoria 3168, Australia
Anthony E. Hughes
Affiliation:
CSIRO Materials Science & Engineering, Private Bag 33, Clayton South, Victoria 3169, Australia CSIRO Future Manufacturing Flagship, Gate 5 Normanby Road, Clayton, Victoria 3168, Australia
Tim H. Muster
Affiliation:
CSIRO Materials Science & Engineering, Private Bag 33, Clayton South, Victoria 3169, Australia CSIRO Future Manufacturing Flagship, Gate 5 Normanby Road, Clayton, Victoria 3168, Australia
Timothy J. Davis
Affiliation:
CSIRO Materials Science & Engineering, Private Bag 33, Clayton South, Victoria 3169, Australia CSIRO Future Manufacturing Flagship, Gate 5 Normanby Road, Clayton, Victoria 3168, Australia
A. Matthew Glenn
Affiliation:
CSIRO Minerals, Box 312, Clayton South, Victoria 3169, Australia
*
Corresponding author. E-mail: [email protected]
Get access

Abstract

Electron-beam-induced carbon film deposition has long been recognized as a side effect of scanning electron microscopy. To characterize the nature of this type of contamination, silicon wafers were subjected to prolonged exposure to 15 kV electron beam energy with a probe current of ∼300 pA. Using Raman spectroscopy, the deposited coating was identified as an amorphous carbon film with an estimated crystallite size of 125 Å. Using atomic force microscopy, the cross-sectional profile of the coating was found to be raised and textured, indicative of the beam raster pattern. A map of the Raman intensity across the coating showed increased intensity along the edges and at the corner of the film. The intensity profile was in excess of that which could be explained by thickness alone. The enhancement was found to correspond with a modeled local field enhancement induced by the coating boundary and showed that the deposited carbon coating generated a localized disturbance in the opto-electrical properties of the substrate, which is compared and contrasted with Raman edge enhancement that is produced by surface structure in silicon.

Keywords

electron microscopycarbon depositionamorphous thin filmsRaman spectroscopy
Type
Thick and Thin Films: Standards and Analysis
Information
Microscopy and Microanalysis , Volume 16 , Issue 1 , February 2010 , pp. 13 - 20
Copyright
Copyright © Microscopy Society of America 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Baldan, M.R., Almeida, E.C., Azevedo, A.F., Goncalves, E.S., Rezende, M.C. & Ferreira, N.G. (2007). Raman validity for crystallite size Lα determination on reticulated vitreous carbon with different graphitization index. Appl Surf Sci 254(2), 600–603.CrossRefGoogle Scholar
Claps, R., Dimitropoulos, D., Han, Y. & Jalali, B. (2002). Observation of Raman emission in silicon waveguides at 1.54 μm. Opt Express 10, 1305–1313.CrossRefGoogle Scholar
Djenizian, T., Santinacci, L., Hildebrand, H. & Schmuki, P. (2003). Electron beam induced carbon deposition used as a negative resist for selective porous silicon formation. Surf Sci 524(1–3), 40–48.Google Scholar
Garetto, A.D., Griffis, D.P., Russell, P.E., Fowlkes, J. & Rack, P.D. (2005). Growth mechanisms of electron beam induced carbon deposition using hydrocarbon contamination. Microsc Microanal 11(S2), 850–851.CrossRefGoogle Scholar
Joy, D.C., Romig, A.D. & Goldstein, J.I. (1986). Principles of Analytical Electron Microscopy. New York: Plenum Press.CrossRefGoogle Scholar
Knight, D.S. & White, W.B. (1989). Characterization of diamond films by Raman spectroscopy. J Mater Res 4(2), 385–393.CrossRefGoogle Scholar
Konuma, H. (1983). Rate of carbon contamination on copper, iron and aluminum targets in gas flows by an electron microprobe. Mikrochimica Acta (Wien) II, 99–108.CrossRefGoogle Scholar
McCartney, J.T. & Ergun, S. (1962). Refractive index and thickness of ultrathin sections of coals and graphite by interferometry. J Opt Soc Am 52(2), 197–200.CrossRefGoogle Scholar
Muster, T.H. & Hughes, A.E. (2006). Applications and limitations of scanning kelvin probe force microscopy for the surface analysis of aluminum alloys. J Electrochem Soc 153, B474–B485.CrossRefGoogle Scholar
Poborchii, V., Tada, T. & Kanayama, T. (2009). Edge-enhanced Raman scattering in Si nanostripes. Appl Phys Lett 94, 131907.CrossRefGoogle Scholar
Prawer, S., Ninio, F. & Blanchonette, I. (1990). Raman spectroscopic investigation of ion-beam-irradiated glassy carbon. J Appl Phys 68(5), 2361–2366.CrossRefGoogle Scholar
Sieber, I., Hildebrand, H., Djenizian, T. & Schmuki, P. (2003). Electron beam induced writing of corrosion protection. Electrochem Solid-State Lett 6(1), C1–C3.Google Scholar
Stewart, R.L. (1934). Insulating films formed under electron and ion bombardment. Phys Rev 45, 488–490.CrossRefGoogle Scholar
Taflove, A. & Hagness, S.C. (2000) Computational Electrodynamics: The Finite-Difference Time-Domain Method, 2nd ed.Norwood, MA: Artech House.Google Scholar
Tuinstra, F. & Koenig, J.L. (1970). Raman spectrum of graphite. J Chem Phys 53, 1126–1130.CrossRefGoogle Scholar
Ueda, K. & Yoshimura, M. (2004). Fabrication of nanofigures by focused electron beam-induced deposition. Thin Solid Films 464-465, 331–334.CrossRefGoogle Scholar
Watson, J.H.L. (1947). An effect of electron bombardment upon carbon black. J Appl Phys 18, 153–161.Google Scholar
Wei, X.L., Liu, Y., Chen, Q. & Peng, L.M. (2008). Controlling electron-beam-induced carbon deposition on carbon nanotubes by Joule heating. Nanotechnol 19, 355304.Google Scholar
Zoteev, A.V., Golovan', L.A., Krutkova, E.Y., Laktyun'kin, A.V., Mamichev, D.A., Kashkarov, P.K., Timoshenko, V.Y., Astrova, E.V. & Perova, T.S.M. (2007). Enhancement of the Raman scattering in grooved silicon structures. Semiconductors 41(8), 989–991.CrossRefGoogle Scholar