Devices for character recognition as well as cellular phones require computational elements that work at higher speeds with lower current requirements. Separation by IMplanted Oxygen (SIMOX) is one type of Silicon On Insulator (SOI) technology that shows great promise in meeting the future demands for faster and more efficient applications. The ultra-thin SIMOX substrates produced by low energy/low dose implant methods make possible the construction of large scale integrated circuits with fully depleted CMOS devices. One of the great challenges in the production of SIMOX technology is achieving high quality Si and Si02 layers. High energy implantation of 0+ ions causes damage to the Si crystal and therefore requires a high temperature annealing step to repair it. Annealing of SIMOX takes place in a mixed atmosphere of argon and oxygen. Having oxygen in the ambient creates a superficial Si02 layer. This reduces the thickness of the SOI layer but also protects the surface from pitting.