Effective Utilization of STEM Imaging Capability in FIB for Physical Failure Analysis on 20nm &amp; 14nm Transistor Nodes in Semiconductor Wafer Foundries

W. Zhao; D. Nedeau; S. Kodali; J. Huang; C.-K. Oh; S.-K. Lim; R. Rai; Z.-H. Mai; J. Lam

doi:10.1017/S1431927613006508

Effective Utilization of STEM Imaging Capability in FIB for Physical Failure Analysis on 20nm & 14nm Transistor Nodes in Semiconductor Wafer Foundries

Published online by Cambridge University Press: 09 October 2013

W. Zhao ,

D. Nedeau ,

S. Kodali ,

J. Huang ,

C.-K. Oh ,

S.-K. Lim ,

R. Rai ,

Z.-H. Mai and

J. Lam

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W. Zhao: Affiliation:
D. Nedeau: Affiliation:
S. Kodali: Affiliation:
J. Huang: Affiliation:
C.-K. Oh: Affiliation:
S.-K. Lim: Affiliation:
R. Rai: Affiliation:
Z.-H. Mai: Affiliation:
J. Lam: Affiliation:

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Abstract

Abstract

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Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

Type: Abstract
Information: Microscopy and Microanalysis , Volume 19 , Issue S2: Proceedings of Microscopy & Microanalysis 2013 , August 2013 , pp. 902 - 903

DOI: https://doi.org/10.1017/S1431927613006508 [Opens in a new window]

Article contents

Effective Utilization of STEM Imaging Capability in FIB for Physical Failure Analysis on 20nm & 14nm Transistor Nodes in Semiconductor Wafer Foundries

Abstract

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