The Effect of High Temperature Annealing on the Grain Characteristics of a Thin Chemical Vapor Deposition Silicon Carbide Layer

I.J. van Rooyen; P.M. van Rooyen; M.L. Dunzik-Gougar

doi:10.1017/S1431927613011732

The Effect of High Temperature Annealing on the Grain Characteristics of a Thin Chemical Vapor Deposition Silicon Carbide Layer

Published online by Cambridge University Press: 09 October 2013

I.J. van Rooyen ,

P.M. van Rooyen and

M.L. Dunzik-Gougar

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I.J. van Rooyen: Affiliation:
P.M. van Rooyen: Affiliation:
M.L. Dunzik-Gougar: Affiliation:

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Abstract

Abstract

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Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

Type: Abstract
Information: Microscopy and Microanalysis , Volume 19 , Issue S2: Proceedings of Microscopy & Microanalysis 2013 , August 2013 , pp. 1948 - 1949

DOI: https://doi.org/10.1017/S1431927613011732 [Opens in a new window]

Article contents

The Effect of High Temperature Annealing on the Grain Characteristics of a Thin Chemical Vapor Deposition Silicon Carbide Layer

Abstract

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