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Domain Structure of Epitaxial SrRuO3 Thin Films on (001) LaA1O3

Published online by Cambridge University Press:  02 July 2020

J. C. Jiang
Affiliation:
Dept. of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, 48109
X.Q. Pan
Affiliation:
Dept. of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, 48109
Q. Gan
Affiliation:
Dept. of Mechanical Engineering and Materials Science, Duke University, Durham, NC, 27708
C. B. Eom
Affiliation:
Dept. of Mechanical Engineering and Materials Science, Duke University, Durham, NC, 27708
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Extract

Epitaxial thin film of SrRuO3 is very useful in device applications, due to its important electrical and magnetic properties. For example, (Pb,Zr)TiO3 ferroelectric capacitors with SrRuO3 thin film electrodes exhibit superior fatigue and leakage characteristics. Epitaxial SrRuO3 thin films grown on different substrates, such as on (001) SrTiO3 and (001) LaA1O3, have different magnetic properties, owing to the different microstructures in the film. Microstructures in epitaxial SrRuO3 thin films grown on (001) SrTiO3 have been studied in our previously work. In this paper, microstructure of epitaxial SrRu03 thin films grown on (001) LaA103 is reported.

SrRuO3 thin films on (001) LaA1O3 were deposited by 90° off-axis sputtering. For cross-section TEM studies the SrRuO3/LaA1O3 heterostructural samples were cut along the [100] direction of LaA103. The cut slides were glued face-to-face by joining the SrRu03 surfaces. Plan-view and cross-section TEM specimens were prepared by mechanical grinding, polishing and dimpling, followed by Ar-ion milling.

Type
Microscopy of Ceramics and Minerals
Copyright
Copyright © Microscopy Society of America

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References

References:

1.Eom, C. B., Dover, R. B. Van, Phillips, J. M., Werder, D. J., Marshall, J. H., Chen, C. H., Cava, R. J., Fleming, R. M., and Fork, D. K., Appl. Phys. Lett. 63, (1993) 2570CrossRefGoogle Scholar
2. For example, Kacedon, D. B., Rao, R. A. and Eom, C. B., Appl. Phys. Lett. 71, (1997)1724CrossRefGoogle Scholar
3.Jiang, J. C., Pan, X. Q. and Chen, C. L., Appl. Phys. Lett, (in press)Google Scholar