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Direct Imaging of Device Characteristics In a Focused ion Beam System

Published online by Cambridge University Press:  02 July 2020

A. N. Campbell
Affiliation:
Sandia National Laboratories, MS 1081, P. O. Box 5800, Albuquerque, NM87185-1081
J. M. Soden
Affiliation:
Sandia National Laboratories, MS 1081, P. O. Box 5800, Albuquerque, NM87185-1081
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Extract

A great deal can be learned about integrated circuits (ICs) and microelectronic structures simply by imaging them in a focused ion beam (FIB) system. FIB systems have evolved during the past decade from something of a curiosity to absolutely essential tools for microelectronics design verification and failure analysis. FIB system capabilities include localized material removal, localized deposition of conductors and insulators, and imaging. A major commercial driver for FIB systems is their usefulness in the design debugging cycle by (1) rewiring ICs quickly to test design changes and (2) making connection to deep conductors to facilitate electrical probing of complex ICs. FIB milling is also used for making precision cross sections and for TEM sample preparation of microelectronic structures for failure analysis and yield enhancement applications.

Type
Microscopy of Semiconducting and Superconducting Materials
Copyright
Copyright © Microscopy Society of America

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References

References:

1.)Olson, T. K. et al., Proc. 18th Inter. Symp. For Test, and Fail. Anal. (1992)373.Google Scholar
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3.) Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed-MartinCompany, for the United States Department of Energy under contract no. DE-AC04-94AL85000.Google Scholar