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Dirac States of 2D Topological Insulators: Effect of Heterovalent Dopant-Content

Published online by Cambridge University Press:  12 April 2019

Salma Khatun  and
Amlan J. Pal
Salma Khatun
Affiliation:
Department of Solid State Physics, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
Amlan J. Pal*
Affiliation:
Department of Solid State Physics, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
*
*Author for correspondence: Amlan J. Pal, E-mail: [email protected]
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Abstract

We have studied Bi2Se3 at its 2D-limit using scanning tunneling spectroscopy (STS). Bulk Bi2Se3 is a well-known topological insulator having gapless surface states. In the 2D limit, the interior of the material exhibits a band gap, whereas the periphery shows a gapless metallic state having a Dirac point. We demonstrate a method to tune the Fermi energy and hence the Dirac point of Bi2Se3 nanoplates through doping at the anionic site. For this purpose, STS measurements were carried out on the Bi2Se3 system. We have used bromide as a dopant, which turns the material to n-type in nature. As a result, STS studies infer that the Fermi energy (EF) shifted toward the conduction band and consequently the Dirac point could be found to move away from Fermi energy. Through STS measurements, we have demonstrated a correlation between the shift of Dirac point position and the dopant content. The size, shape, and compositions of Bi2Se3 nanoflakes and concentration of bromine in the doped nanostructures were determined using transmission electron microscopy, associated energy dispersive X-ray spectroscopy analysis, and X-ray diffraction.

Keywords

band positions and Dirac pointdopant-contentheterovalent dopingtopological insulators
Type
Materials Applications
Information
Microscopy and Microanalysis , Volume 25 , Issue 6 , December 2019 , pp. 1437 - 1441
Copyright
Copyright © Microscopy Society of America 2019 

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