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Determination of the Inelastic Mean-Free-Path and Mean Inner Potential for AlAs and GaAs Using Off-Axis Electron Holography and Convergent Beam Electron Diffraction

Published online by Cambridge University Press:  28 September 2007

Suk Chung ,
David J. Smith  and
Martha R. McCartney
Suk Chung
Affiliation:
School of Materials, Arizona State University, Tempe, AZ 85287, USA
David J. Smith
Affiliation:
School of Materials, Arizona State University, Tempe, AZ 85287, USA Department of Physics, Arizona State University, Tempe, AZ 85287, USA
Martha R. McCartney
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ 85287, USA
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Abstract

The mean-free-paths for inelastic scattering of high-energy electrons (200 keV) for AlAs and GaAs have been determined based on a comparison of thicknesses as measured by electron holography and convergent-beam electron diffraction. The measured values are 77 ± 4 nm and 67 ± 4 nm for AlAs and GaAs, respectively. Using these values, the mean inner potentials of AlAs and GaAs were then determined, from a total of 15 separate experimental measurements, to be 12.1 ± 0.7 V and 14.0 ± 0.6 V, respectively. These latter measurements show good agreement with recent theoretical calculations within experimental error.

Keywords

electron holographymean inner potentialinelastic mean-free-pathAlAsGaAs
Type
MATERIALS APPLICATIONS
Information
Microscopy and Microanalysis , Volume 13 , Issue 5 , October 2007 , pp. 329 - 335
Copyright
© 2007 Microscopy Society of America

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References

REFERENCES

Bethe, H.A. (1928). Theory of the diffraction of electrons in crystals. Ann Phys (Leipzig) 87, 55–128.Google Scholar
de Ruijter, W.J. & Weiss, J.K. (1993). Detection limits in quantitative off-axis electron holography. Ultramicroscopy 50, 269–283.Google Scholar
Doyle, P. & Turner, P.S. (1968). Relativistic Hartree–Fock X-ray and electron scattering factors. Acta Crystallogr A 24, 390–397.Google Scholar
Gajdardziska-Josifovska, M. & Carim, A.H. (1999). Application of electron holography. In Introduction of Electron Holography, Völkl, E., Allard, L.F. & Joy, D.C. (Eds.), pp. 267–293. New York: Kluwer.
Gajdardziska-Josifovska, M., McCartney, M.R., De Ruijter, W.J., Smith, D.J., Weiss, J.K. & Zuo, J.M. (1993). Accurate measurements of mean inner potential of crystal wedges using digital electron holograms. Ultramicroscopy 50, 285–299.Google Scholar
Han, M.G., Li, J., Xie, Q., Fejes, P., Conner, J., Taylor, B. & McCartney, M.R. (2006). Sample preparation for precise and quantitative electron holographic analysis of semiconductor devices. Microsc Microanal 12, 295–301.Google Scholar
Kruse, P., Rosenauer, A. & Gerthsen, D (2003). Determination of the mean inner potential in III–V semiconductors by electron holography. Ultramicroscopy 96, 11–16.Google Scholar
Kruse, P., Schowalter, M., Lamoen, D., Rosenauer, A. & Gerthsen, D. (2006). Determination of the mean inner potential in III–V semiconductors, Si and Ge by density functional theory and electron holography. Ultramicroscopy 106, 105–113.Google Scholar
Lenk, A., Lichte, H. & Muehle, U. (2005). 2D-mapping of dopant distribution in deep sub micron CMOS devices by electron holography using adapted FIB-preparation. J Electron Microsc 54, 351–359.Google Scholar
Li, J., McCartney, M.R., Dunin-Borkowski, R.E. & Smith, D.J. (1999). Determination of mean inner potential of germanium using off-axis electron holography. Acta Crystallogr A 55, 652–658.Google Scholar
McCartney, M.R. (2005). Characterization of charging in semiconductor device materials by electron holography. J Electron Microsc 54, 239–242.Google Scholar
McCartney, M.R. & Gajdardziska-Josifovska, M. (1994). Absolute measurement of normalized thickness, t/λi, from off-axis electron holography. Ultramicroscopy 53, 283–289.Google Scholar
McCartney, M.R., Smith, D.J., Farrow, R.F.C. & Marks, R.F. (1997). Off-axis electron holography of epitaxial FePt films. J Appl Phys 82, 2461–2465.Google Scholar
O'Keeffe, M. & Spence, J.C.H. (1994). On the average Coulomb potential (Σ0) and constraints on the electron density in crystals. Acta Crystallogr A 50, 33–45.Google Scholar
Radi, G. (1970). Complex lattice potentials in electron diffraction calculated for a number of crystals. Acta Crystallogr A 26, 41–56.Google Scholar
Rau, W.D., Schwander, P., Baumann, F.H., Höppner, W. & Ourmazd, A. (1999). Two-dimensional mapping of the electrostatic potential in transistors by electron holography. Phys Rev Lett 82, 2614–2617.Google Scholar
Reimer, L. (1991). Transmission Electron Microscopy. Berlin: Springer.
Spence, J.C.H. (1993). On the accurate measurement of structure-factor amplitudes and phases by electron diffraction. Acta Crystallogr A 49, 231–260.Google Scholar
Wang, Y.C., Chou, T.M., Libera, M. & Kelly, T.F. (1997). Transmission electron holography of silicon nanospheres with surface oxide layers. Appl Phys Lett 70, 1296–1298.Google Scholar
Williams, D.B. & Carter, C.B. (1996). Transmission Electron Microscopy. New York: Plenum Press.
Zuo, J.M. (2007). CBED simulation program. Available at http://cbed.mse.uiuc.edu/index.html.