Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-26T15:37:53.517Z Has data issue: false hasContentIssue false
  • English
  • Français

Detection of Arsenic Dopant Atoms in Silicon Crystal by Aberration Corrected Scanning Transmission Electron Microscope

Published online by Cambridge University Press:  26 July 2009

Y Oshima ,
Y Hashimoto ,
H Sawada ,
N Hashikawa ,
K Asayama ,
Y Kondo ,
Y Tanishiro  and
K Takayanagi
Y Oshima
Affiliation:
Japan Science and Technology Agency,Tokyo Institute of Technology
Y Hashimoto
Affiliation:
Tokyo Institute of Technology
H Sawada
Affiliation:
Japan Science and Technology Agency,JEOL Ltd
N Hashikawa
Affiliation:
Renesas Technology Corp
K Asayama
Affiliation:
Renesas Technology Corp
Y Kondo
Affiliation:
Japan Science and Technology Agency,JEOL Ltd
Y Tanishiro
Affiliation:
Japan Science and Technology Agency,Tokyo Institute of Technology
K Takayanagi
Affiliation:
Japan Science and Technology Agency,Tokyo Institute of Technology

Extract

Core share and HTML view are not available for this content. However, as you have access to this content, a full PDF is available via the ‘Save PDF’ action button.

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Type
Abstract
Information
Microscopy and Microanalysis , Volume 15 , Supplement S2 , July 2009 , pp. 1488 - 1489
Copyright
Copyright © Microscopy Society of America 2009