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Defect Structures in Semiconducting Resi2−x Epitaxial Thin Films

Published online by Cambridge University Press:  02 July 2020

A. Misra  and
T.E. Mitchell
A. Misra
Affiliation:
Materials Science and Technology Division, MS K765, Los Alamos National Laboratory, Los Alamos, NM87545;, J.E. Mahan, Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado80523.
T.E. Mitchell
Affiliation:
Materials Science and Technology Division, MS K765, Los Alamos National Laboratory, Los Alamos, NM87545;, J.E. Mahan, Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado80523.
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Extract

Narrow band gap semiconductors such as ReSi2-x (Eg ∽0.12 eV) are potential materials for infrared detectors [1]. Further, ReSi2-x is in thermodynamic equilibrium and has a very small lattice mismatch with Si offering the potential of developing ReSi2-x /Si heterojunction devices where the detector element and the signal processing circuitry can be integrated on one Si chip. In a previous study, strong crystallographic alignment between ReSi2-x film and (001)Si substrate was observed by ion channeling [1]. In this study, a transmission electron microscopy (TEM) study has been performed on ReSi2-x epitaxial films on (001) Si. Comparisons are made to our previous microscopy study [2] on the defect structures in bulk single crystals of ReSi2-x.

ReSi2-x films were prepared by reactive deposition epitaxy (RDE) technique by evaporating Re onto (001) Si wafer at 650 °C. A cap layer of Cr was evaporated at room temperature. A bright field (BF) TEM image of the interface in cross-section is shown in Fig. 1 with the corresponding selected area diffraction pattern (SADP) shown in Fig. 2.

Type
Defects in Semiconductors
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 726 - 727
Copyright
Copyright © Microscopy Society of America

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References

1.Mahan, J.E., Bai, G., Nicolet, M.-A., Long, R.G. and Geib, K.M., Thin Solid Films, 207, p 223 (1992).CrossRefGoogle Scholar
2.Misra, A., Chu, F. and Mitchell, T.E., Phil. Mag. A, 79, (1999), in press.CrossRefGoogle Scholar
3.Bjorketun, L.-O., Hultman, L., Ivanov, LP., Wahab, Q. and Sundgren, J.-E., J. Cryst. Growth, 182, p379 (1997).CrossRefGoogle Scholar