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Damage in III–V Compounds during Focused Ion Beam Milling

Published online by Cambridge University Press:  04 March 2005

S. Rubanov  and
P.R. Munroe
S. Rubanov
Affiliation:
Electron Microscope Unit, University of NSW, Sydney 2052, Australia
P.R. Munroe
Affiliation:
Electron Microscope Unit, University of NSW, Sydney 2052, Australia
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Abstract

The damage layers generated in III–V compounds exposed to energetic gallium ions in a focused ion beam (FIB) instrument have been characterized by transmission electron microscopy (TEM). The damage on the side walls of the milled trenches is in the form of amorphous layers associated with direct amorphization from the gallium beam, rather than from redeposition of milled material. However, the damage on the bottom of the milled trenches is more complex. For InP and InAs the damage layers include the presence of crystalline phases resulting from recrystallization associated heating from the incident beam and gallium implantation. In contrast, such crystalline phases are not present in GaAs. The thicknesses of the damage layers are greater than those calculated from theoretical models of ion implantation. These differences arise because the dynamic nature of FIB milling means that the energetic ion beams pass through already damaged layers. In InP recoil phosphorus atoms also cause significant damage.

Keywords

focused ion beamsample preparationtransmission electron microscopysample preparationsemiconducting material
Type
Special Issue: Frontiers of Electron Microscopy in Materials Science
Information
Microscopy and Microanalysis , Volume 11 , Issue 5 , October 2005 , pp. 446 - 455
Copyright
© 2005 Microscopy Society of America

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References

REFERENCES

Bender, H. (1999). Focused ion beam specimen preparation for transmission electron microscopy studies of ULSI devices. In Microscopy of Semiconducting Materials 1999, Institute of Physics Conference Series, vol. 164, pp. 593–602.
Bender, H. & Roussel, P. (1997). Cross-sectional transmission electron microscopy and focused ion beam study of advanced silicon devices. In Microscopy of Semiconducting Materials 1997, Institute of Physics Conference Series, Cullis, A.G. & Beanland, R. (Eds.), vol. 157, pp. 465–468. Bristol, Scotland: Institute of Physics.
Cairney, J.M. & Munroe, P.R. (2003). Redeposition effects in transmission electron microscope specimens of FeAl-WC composites prepared using a focused ion beam miller. Micron 34, 97–107.Google Scholar
Giannuzzi, L.A. & Stevie, F.A. (1999). A review of focused ion beam milling techniques for TEM specimen preparation. Micron 30, 197–204.Google Scholar
Jamison, R.B., Mardinly, A.J., Susnitzky, D.W., & Gronsky, R. (2000). Effects of ion species and energy on the amorphization of Si during FIB TEM sample preparation as determined by computational and experimental methods. Microsc Microanal 6 (Suppl.), 526–527.Google Scholar
Langford, R.M., Ozkaya, D., Huey, B., & Petford-Long, A.K. (2001). Broad ion beam milling of focused ion beam prepared transmission electron microscopy cross-section specimens for high resolution electron microscopy using silicon support membranes. In Microscopy of Semiconducting Materials 2001, Institute of Physics Conference Series, Cullis, A.G. & Hutchinson, J.L. (Eds.), vol. 169, pp. 511–514. Bristol, Scotland: Institute of Physics.
Mardinly, J. & Susnitzky, D.W. (1998). Transmission electron microscopy of semiconductor-based products. Mat Res Soc Symp Proc 523, 3–12.Google Scholar
Matteson, T.L., Schwarz, S.W., Houge, E.C., Kempshall, B.W., & Giannuzzi, L.A. (2002). Electron backscattering diffraction investigation of focused ion beam surfaces. J Elec Mat 31, 33–39Google Scholar
McCaffrey, J.P., Phaneuf, M.W., & Madsen, L.D. (2001). Surface damage during ion beam thinning of samples of for transmission electron microscopy. Ultramicroscopy 87, 97–104.Google Scholar
Overwijk, M.H.F., van den Heuvel, F.C., & Sulle-Lieuwma, C.W.T. (1993). Novel scheme for the preparation of transmission electron microscopy specimens with a focused ion beam. J Vac Sci Technol B 11, 2021–2024.Google Scholar
Pearton, S.J., Hobson, W.S., & Abernathy, C.R. (1989). Ion implantation processing of GaAs and related compounds. Mat Res Soc Symp Proc 147, 261–272.Google Scholar
Prenitzer, B.I., Urbanik-Shannon, C.A., Giannuzzi, L.A., Brown, S.R., Irwin, R.B., Shofner, T.L., & Stevie, F.A. (2003). The correlation between ion beam/materials interactions and practical FIB specimen preparation. Microsc Microanal 9, 216–236.Google Scholar
Rajsiri, S., Kempshall, B.W., Schwarz, S.M., & Gianuzzi, L.A. (2002). FIB damage in silicon: Amorphization or Redeposition? Microsc Microanal 8(Suppl.), 50–51.Google Scholar
Rubanov, S. & Munroe, P.R. (2001). Investigation of the structure of damage layers in TEM samples prepared using a FIB. J Mater Sci Lett 20, 1181–1183.Google Scholar
Rubanov, S. & Munroe, P.R. (2004a). FIB-induced damage in silicon. J Microsc 214, 213–221.Google Scholar
Rubanov, S. & Munroe, P.R. (2004b). The application of FIB milling for specimen preparation from crystalline germanium. Micron 35, 549–556.Google Scholar
Templeton, I.M. & Champion, H.G. (1995). Focused ion-beam line profiles: A study of some factors affecting beam broadening. J Vac Sci Technol B 13, 2603–2606.Google Scholar
Urbanik, C.A., Prenitzer, B.I., Giannuzzi, L.A., Brown, S.R., Shofner, T.L., Rossie, E., Irwin, R.B., & Stevie, F.A. (1999). Characterization of FIB damage in silicon. Microsc Microanal 5, 740–741.Google Scholar
Walker, J.F. & Broom, R.F. (1997). Surface damage of semiconductor TEM samples prepared by focused ion beams. In Microscopy of Semiconducting Materials X, Institute of Physics Conference Series, Cullis, A.G. & Hutchinson, J.L. (Eds.), vol. 157, pp. 473–478. Bristol, Scotland: Institute of Physics.
Yamaguchi, A. & Nishikawa, T. (1995). Low damage specimen preparation technique for transmission electron microscopy using iodine gas-assisted focused ion beam milling. J Vac Sci Tech B 13, 962–966.Google Scholar
Yamaguchi, A., Shibata, M., & Hashinaga, T. (1993). Transmission electron microscopy specimen preparation technique using focused ion beam fabrication: Application to GaAs metal-semiconductor field effect transistors. J Vac Sci Tech B 11, 2016–2020.Google Scholar
Young, R.J., Kirk, E.C.G., Williams, D.A., & Ahmed, H. (1990). Fabrication of planar and cross-sectional TEM specimens using a focused ion beam. Mat Res Soc Symp Proc 199, 205–216.Google Scholar