No CrossRef data available.
Article contents
Crystallographic Features and Subband Transitions of Al/InAs Metal-Semiconductor Junctions
Published online by Cambridge University Press: 02 July 2020
Extract
To study the nature of metal-semiconductor junction, metal-clad InAs quantum wells with aluminum deposited on 15-nm thick InAs grown on (100) GaAs with AlSb barrier were prepared by an in-situ method (aluminum was grown immediately by molecular beam epitaxy) and by an ex-situ method (aluminum was deposited after exposing InAs surface in ambient condition by selective etching). Cross sectional TEM studies indicated that the Al grains in the clad aluminum layer were randomly arranged in the ex-situ grown junctions, while, in the in-situ samples, the aluminum grains were found to be well oriented to the underlying InAs.
When the interface is viewed along [Oil], three observed crystallographic relationships for in-situ Al growth are
1. [011]AI // [011]InAs and (100)AI // (100)InAs as shown in Fig. 1(a): the aluminum grains of facecentered cubic (fee) structure are perfectly aligned with the fee InAs lattice when they grow;
- Type
- Semiconductors
- Information
- Microscopy and Microanalysis , Volume 6 , Issue S2: Proceedings: Microscopy & Microanalysis 2000, Microscopy Society of America 58th Annual Meeting, Microbeam Analysis Society 34th Annual Meeting, Microscopical Society of Canada/Societe de Microscopie de Canada 27th Annual Meeting, Philadelphia, Pennsylvania August 13-17, 2000 , August 2000 , pp. 1092 - 1093
- Copyright
- Copyright © Microscopy Society of America