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A Comprehensive Approach Towards Optimizing the Xenon Plasma Focused Ion Beam Instrument for Semiconductor Failure Analysis Applications

Published online by Cambridge University Press:  05 June 2017

Srinivas Subramaniam ,
Jennifer Huening ,
John Richards  and
Kevin Johnson
Srinivas Subramaniam*
Affiliation:
Intel Corporation, 2501 NW 229th Avenue, Hillsboro, OR 97124, USA
Jennifer Huening
Affiliation:
Intel Corporation, 2501 NW 229th Avenue, Hillsboro, OR 97124, USA
John Richards
Affiliation:
Intel Corporation, 2501 NW 229th Avenue, Hillsboro, OR 97124, USA
Kevin Johnson
Affiliation:
Intel Corporation, 2501 NW 229th Avenue, Hillsboro, OR 97124, USA
*
*Corresponding author. [email protected]
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Abstract

The xenon plasma focused ion beam instrument (PFIB), holds significant promise in expanding the applications of focused ion beams in new technology thrust areas. In this paper, we have explored the operational characteristics of a Tescan FERA3 XMH PFIB instrument with the aim of meeting current and future challenges in the semiconductor industry. A two part approach, with the first part aimed at optimizing the ion column and the second optimizing specimen preparation, has been undertaken. Detailed studies characterizing the ion column, optimizing for high-current/high mill rate activities, have been described to support a better understanding of the PFIB. In addition, a novel single-crystal sacrificial mask method has been developed and implemented for use in the PFIB. Using this combined approach, we have achieved high-quality images with minimal artifacts, while retaining the shorter throughput times of the PFIB. Although the work presented in this paper has been performed on a specific instrument, the authors hope that these studies will provide general insight to direct further improvement of PFIB design and applications.

Keywords

Xe plasmaPFIBFIBfailure analysissemiconductorsanalytical instrumentation
Type
Instrumentation and Software
Information
Microscopy and Microanalysis , Volume 23 , Issue 4 , August 2017 , pp. 769 - 781
Copyright
© Microscopy Society of America 2017 

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References

Altman, F. & Young, R.J. (2014). Site-specific metrology, inspection, and failure analysis of three-dimensional interconnects using focused ion beam technology. J Micro Nanolithogr MEMS MOEMS 13(1), 011202-1–011202-11.Google Scholar
Bi, J., Jiang, X.R. & Kruit, P. (1997). Theoretical and experimental investigations on Coulomb interactions in a two-lens focussed ion beam instrument. Microelectron Eng 35, 439–442.Google Scholar
Gierak, J., Vieu, C., Schneider, M. & Launois, H. (1997). Optimization of experimental operating parameters for very high resolution focused ion beam applications. J Vac Sci Technol B15(6), 2373–2378.CrossRefGoogle Scholar
Hrnčiř, T., Lopour, F., Zadražil, M., Delobbe, A., Salord, O. & Sudraud, P. (2012). Novel plasma FIB/SEM for high speed failure analysis and real time imaging of large volume removal. ISTFA 2012, Conference Proceedings, Phoenix, AZ, USA, November 1, pp. 26–29.Google Scholar
Kellogg, S., Schampers, R., Zhang, S., Graupera, A., Miller, T., Laur, W.D. & Diriwachter, A. (2010). High throughput sample preparation and analysis using inductively coupled plasma (ICP) focused ion beam source. Microsc Microanal 16(Suppl 2), 222–223.CrossRefGoogle Scholar
Kim, M.H., Park, T., Lee, D., Yoon, E., Park, D., Woo, H. & Ha, D.C.J. (1999). Highly (200)-oriented Pt films on SiO2/Si substrates by seed selection through amorphization and controlled grain growth. J Mater Res 14(3), 634–637.CrossRefGoogle Scholar
Martens, S., Mack, W., Courtade, F., Perdu, P., Wilde, J. & Voelklein, F. (2009). Laser-Based Target Preparation in 3D Integrated Electronics Packages. J Electron Packag 131(3), 031006–031006-6.CrossRefGoogle Scholar
Smith, N.S., Skoczylas, W.P., Kellogg, S.M., Kinion, D.E., Tesch, P.P., Sutherland, O., Aanesland, A. & Boswell, R.W. (2006). High brightness inductively coupled plasma source for high current focused ion beam applications. J Vac Sci Technol B 24(6), 2902–2906.CrossRefGoogle Scholar
Subramaniam, S. & Johnson, K. (2014). Optimization of high current xenon plasma ion beams for applications in semiconductor failure analysis and development. Microsc Microanal 20(Suppl 3), 296–297.Google Scholar
Subramaniam, S., Smath, L., Brown, A. & Johnson, K. (2016). Use of single crystal masks for improved mill characteristics in high current xenon plasma FIB instrumentation. Microsc Microanal 22(Suppl 3), 152–153.CrossRefGoogle Scholar
Stevie, F.A., Giannuzzi, L.A. & Prenitzer, B.I (2005). The focused ion beam instrument. In Introduction to Focused Ion Beams Instrumentation, Theory, Techniques and Practice, Giannuzzi, L.A & Stevie, F.A. (Eds.), pp. 5–6. Berlin Heidelberg, Germany: Springer Science+Business Media, Inc.Google Scholar
Tan, S., Livengood, R., Greenzweig, Y., Drezner, Y. & Shima, D. (2012). Probe current distribution characterization technique for focused ion. J Vac Sci Technol B30, 06F606-1–06F606-6.Google Scholar
Volkert, C.A. & Minor, A.A. (2007). Focused ion beam microscopy and micromachining. MRS Bull 32(5), 389–399.Google Scholar
Young, R., Rue, C., Randolph, S., Chandler, C., Franz, G., Schampers, R., Klumpp, A. & Kwakman, L. (2011). A comparison of xenon plasma FIB technology with conventional gallium LMIS FIB: Imaging, milling, and gas-assisted applications. Micros Microanal 17(Suppl 2), 652–653.CrossRefGoogle Scholar
Young, R.J. (2011). Site-specific analysis of advanced packaging enabled by focused ion beams. Electron Device Fail Anal 13(1), 12–19.Google Scholar
Wang, L. (1997). Design optimization of two lens focused ion beam columns. J Vac Sci Technol B15(4), 833–839.CrossRefGoogle Scholar