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Composition Fluctuation of In and Well-Width Fluctuation in InGaN/GaN Multiple Quantum Wells in Light-Emitting Diode Devices

Published online by Cambridge University Press:  06 August 2013

Gil Ho Gu ,
Dong Hyun Jang ,
Ki Bum Nam  and
Chan Gyung Park
Gil Ho Gu
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, SouthKorea
Dong Hyun Jang
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, SouthKorea
Ki Bum Nam
Affiliation:
Characterization & Analysis Lab, Seoul Opto Device Co., Ansan, 425-851, Korea
Chan Gyung Park*
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, SouthKorea National Center for Nanomaterials Technology (NCNT), Pohang, Kyungbuk 790-784, SouthKorea
*
*Corresponding author. E-mail: [email protected]
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Abstract

In this paper, we have observed an atomic-scale structure and compositional variation at the interface of the InGaN/GaN multi-quantum wells (MQW) by both scanning transmission electron microscopy (STEM) using high-angle annular dark-field mode and atom probe tomography (APT). The iso-concentration analysis of APT results revealed that the roughness of InGaN/GaN interface increased as the MQW layers were filled up, and that the upper interface of MQW (GaN/InGaN to the p-GaN side) was much rougher than that of the lower interface (InGaN/GaN tot he n-GaN side). On the basis of experimental results, it is suggested that the formation of interface roughness can affect the quantum efficiency of InGaN-based light-emitting diodes.

Keywords

composition fluctuation of Inwell-width fluctuationatom probeSTEMInGaNLED
Type
Research Article
Information
Microscopy and Microanalysis , Volume 19 , Supplement S5: IUMAS , August 2013 , pp. 99 - 104
Copyright
Copyright © Microscopy Society of America 2013 

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