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Composition Distribution In Laterally Modulated Inalas Films

Published online by Cambridge University Press:  02 July 2020

R.D. Twesten ,
D. M. Follstaedt ,
J. Mirecki Millunchick ,
S. R. Lee ,
A.G. Norman ,
S.P. Arenkiel ,
J. L. Reno ,
E. D. Jones ,
A. Mascarenhas  and
Y. Zhang
R.D. Twesten
Affiliation:
Center for Microanalysis of Materials, University of Illinois, Urbana, IL61801-2985
D. M. Follstaedt
Affiliation:
Sandia National Laboratories, Albuquerque, NM87185-1056
J. Mirecki Millunchick
Affiliation:
University of Michigan, Materials Science and Engineering, Ann Arbor, MI48109-2163
S. R. Lee
Affiliation:
Sandia National Laboratories, Albuquerque, NM87185-1056
A.G. Norman
Affiliation:
National Renewable Energy Laboratory, Golden, CO80401-3393
S.P. Arenkiel
Affiliation:
National Renewable Energy Laboratory, Golden, CO80401-3393
J. L. Reno
Affiliation:
Sandia National Laboratories, Albuquerque, NM87185-1056
E. D. Jones
Affiliation:
Sandia National Laboratories, Albuquerque, NM87185-1056
A. Mascarenhas
Affiliation:
National Renewable Energy Laboratory, Golden, CO80401-3393
Y. Zhang
Affiliation:
National Renewable Energy Laboratory, Golden, CO80401-3393
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Extract

Quantum confinement effects in opto-electronic materials have typically been limited to onedimensional confinement due to the constraints of epitaxial growth techniques. One method of forming higher degrees of confinement is the spontaneous lateral modulation seen in InAlAs shortperiod superlattices (SPS) grown on InP(00l). Here, a small number of monolayers (0.5 ˜ 2) of InAs and AlAs is alternately deposited by MBE to build a layer that exhibits lateral modulation on the 10 ˜ 25 nm scale. These materials show strong polarization and a large red shift (˜500meV) of the photo-emission spectra.

A key to understanding and predicting the properties of these films is determining their composition distribution. Using an HB-501 STEM, we have investigated the detailed composition distribution within a strongly modulated sample. The sample was grown in slight tension with respect to the InP substrate, a condition in which lateral modulation is known to be strong. Figure 1 shows a highangle annular dark-field (HAADF) image together with an intensity line scan from the image.

Type
Atomic Structure And Microchemistry Of Interfaces
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 174 - 175
Copyright
Copyright © Microscopy Society of America

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References

1 Mirecki Millunchick, J., et al., MRS Bulletin. 22, n7 July 1997. p 38CrossRefGoogle Scholar

2 Mascarenhas, A., et al., . AIP Conference Proceedings, no.404, 1997, p.303.CrossRefGoogle Scholar

3 Jones, E.D., et al. to appear Proc. of the MRS, Symposium B, Fall 1998 meeting.Google Scholar

4 This work was supported in part by the US DOE under contract DE-AC04-94AL85000 and by the Center for Microanalysis of Materials at the Seitz Materials Research Laboratory.Google Scholar