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Comparison Between Moiré Sampling Scanning Transmission Electron Microscopy Geometrical Phase Analysis Strain Characterization Method and Dark-Field Electron Holography

Published online by Cambridge University Press:  30 July 2021

Alexandre Pofelski ,
Viraj Whabi ,
Shahram Ghanad-Tavakoli  and
Gianluigi Botton
Alexandre Pofelski
Affiliation:
McMaster University, Canada
Viraj Whabi
Affiliation:
McMaster University, United States
Shahram Ghanad-Tavakoli
Affiliation:
McMaster University, Canada
Gianluigi Botton
Affiliation:
Department of Materials Science and Engineering, McMaster University, Hamilton, ON, Canada, Canada

Abstract

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Type
Diffraction Imaging Across Disciplines
Information
Microscopy and Microanalysis , Volume 27 , Supplement S1 , August 2021 , pp. 1982 - 1984
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Copyright
Copyright © The Author(s), 2021. Published by Cambridge University Press on behalf of the Microscopy Society of America

References

Bell, B.W., Koliopoulos, C.L., Moiré topography, sampling theory, and charged-coupled devices, Opt. Lett. 9 (1984) 171.CrossRefGoogle ScholarPubMed
Morimoto, Y., Hayashi, T., Yamaguchi, N., Strain Measurement by Scanning-moire Method, Bull. JSME. 27 (1984) 2347–2352.CrossRefGoogle Scholar
Su, D., Zhu, Y., Scanning moiré fringe imaging by scanning transmission electron microscopy, Ultramicroscopy. 110 (2010) 229–233.CrossRefGoogle ScholarPubMed
Kim, S. et al. , Scanning moiré fringe imaging for quantitative strain mapping in semiconductor devices, Appl. Phys. Lett. 102 (2013) 161604.Google Scholar
Ishizuka, A., Hytch, M., Ishizuka, K., STEM moiré analysis for 2D strain measurements, J. Electron Microsc. (Tokyo). 66 (2017) 217–221.CrossRefGoogle ScholarPubMed
Pofelski, A. et al. , 2D strain mapping using scanning transmission electron microscopy Moiré interferometry and geometrical phase analysis, Ultramicroscopy. 187 (2018) 1–12.Google ScholarPubMed
Pofelski, A., Ghanad-Tavakoli, S., Thompson, D.A., Botton, G.A., Sampling optimization of Moiré geometrical phase analysis for strain characterization in scanning transmission electron microscopy, Ultramicroscopy. 209 (2020) 112858.CrossRefGoogle ScholarPubMed
Prabhakara, V. et al. , Strain measurement in semiconductor FinFET devices using a novel moiré demodulation technique, Semicond. Sci. Technol. 35 (2020) 034002.CrossRefGoogle Scholar
Borisevich, A.Y., Lupini, A.R., Pennycook, S.J., Depth sectioning with the aberration-corrected scanning transmission electron microscope, Proc. Natl. Acad. Sci. 103 (2006) 3044–3048.CrossRefGoogle ScholarPubMed
Javon, E. et al. , Dynamical effects in strain measurements by dark-field electron holography, Ultramicroscopy. 147 (2014) 70–85.CrossRefGoogle ScholarPubMed
Pofelski, A., Whabi, V., Ghanad-Tavakoli, S., Botton, G., Assessment of the strain depth sensitivity of Moiré sampling Scanning Transmission Electron Microscopy Geometrical Phase Analysis through a comparison with Dark-Field Electron Holography, Ultramicroscopy. 223 (2021) 113225.CrossRefGoogle ScholarPubMed
The authors are grateful to the Natural Sciences and Engineering Research Council for a Discovery Grant supporting this work.Google Scholar