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Comparative Analysis of TEM and Atom Probe Tomography on GeSbTe Compositions in Phase Change Random Access Memory

Published online by Cambridge University Press:  23 November 2012

K. Hwang ,
J. Bae ,
K. Park ,
S. Jeon ,
J. Ahn ,
S. Kim ,
H. Jeong ,
S. Nam ,
G. Jeong  and
D. Jang
...Show all authors
K. Hwang
Affiliation:
Semiconductor R&D center, Samsung Electronics, Hwasung-City, Republic of Korea
J. Bae
Affiliation:
Semiconductor R&D center, Samsung Electronics, Hwasung-City, Republic of Korea
K. Park
Affiliation:
Semiconductor R&D center, Samsung Electronics, Hwasung-City, Republic of Korea
S. Jeon
Affiliation:
Semiconductor R&D center, Samsung Electronics, Hwasung-City, Republic of Korea
J. Ahn
Affiliation:
Semiconductor R&D center, Samsung Electronics, Hwasung-City, Republic of Korea
S. Kim
Affiliation:
Semiconductor R&D center, Samsung Electronics, Hwasung-City, Republic of Korea
H. Jeong
Affiliation:
Semiconductor R&D center, Samsung Electronics, Hwasung-City, Republic of Korea
S. Nam
Affiliation:
Semiconductor R&D center, Samsung Electronics, Hwasung-City, Republic of Korea
G. Jeong
Affiliation:
Semiconductor R&D center, Samsung Electronics, Hwasung-City, Republic of Korea
D. Jang
Affiliation:
POSTECH, Pohang, Republic of Korea
C. Park
Affiliation:
POSTECH, Pohang, Republic of Korea
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Abstract

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Type
Research Article
Information
Microscopy and Microanalysis , Volume 18 , Issue S2: Proceedings of Microscopy & Microanalysis 2012 , July 2012 , pp. 1796 - 1797
Copyright
Copyright © Microscopy Society of America 2012

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