Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-26T22:11:22.094Z Has data issue: false hasContentIssue false
  • English
  • Français

Combined EELS and Cathodoluminescence analysis in a STEM microscope of GaN / InGaN quantum wells for LED applications

Published online by Cambridge University Press:  23 September 2015

P Longo ,
DJ Stowe ,
RD Twesten  and
A Howkins
P Longo
Affiliation:
Gatan Inc., 5794 W Las Positas Blvd, Pleasanton, CA, 94588, USA
DJ Stowe
Affiliation:
Gatan Inc., 5794 W Las Positas Blvd, Pleasanton, CA, 94588, USA
RD Twesten
Affiliation:
Gatan Inc., 5794 W Las Positas Blvd, Pleasanton, CA, 94588, USA
A Howkins
Affiliation:
ETC, Brunei University, Uxbridge, London, UK

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Information
Microscopy and Microanalysis , Volume 21 , Supplement S3: Proceedings of Microscopy & Microanalysis 2015 , August 2015 , pp. 1259 - 1260
Copyright
Copyright © Microscopy Society of America 2015 

References

References:

[1] Kim, S. K., Brewster, M., Qian, F., Li, Y., Lieber, C. M. & Gradecak, S., Nanoletters 9, 3940, 2009.Google Scholar
[2] Zagonel, L. F., Mazzucco, S., Tence', M., March, K., Bernard, R, Laslier, B., Jacopin, G., Tchernycheva, M., Rigutti, L., Julien, F. H., Songmuang, R. & Kociak, M., Nanoletters 11, 2011, 568.CrossRefGoogle Scholar
[3] Yang, T.-J., Speck, J. S. & Wu, Y. -R. Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 898611 (March 8, 2014).Google Scholar