Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-26T14:51:48.562Z Has data issue: false hasContentIssue false
  • English
  • Français

Combine TEM with TCAD Simulation - A Novel Approach in Failure Analysis

Published online by Cambridge University Press:  30 July 2021

Yu Zhang ,
Satish Kodali ,
Edmund Banghart ,
Travis Mitchell  and
Frieder Baumann
Yu Zhang
Affiliation:
GLOBALFOUNDRIES, Inc., CLIFTON PARK, New York, United States
Satish Kodali
Affiliation:
GLOBALFOUNDRIES, Inc, United States
Edmund Banghart
Affiliation:
GLOBALFOUNDRIES, Inc, United States
Travis Mitchell
Affiliation:
GLOBALFOUNDRIES, Inc, United States
Frieder Baumann
Affiliation:
GLOBALFOUNDRIES, Inc, United States

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Microscopy and Microanalysis for Real World Problem Solving
Information
Microscopy and Microanalysis , Volume 27 , Supplement S1 , August 2021 , pp. 1548 - 1549
Check for updates
Copyright
Copyright © The Author(s), 2021. Published by Cambridge University Press on behalf of the Microscopy Society of America

References

Engelmann, H. J., Saage, H., Zschech, E., “Application of analytical TEM for failure analysis of Semiconductor Device Structures”, Microelectronics Reliability 40, 1747-1751 (2000)CrossRefGoogle Scholar
Hisamoto, D., Lee, W., Kedzierski, J., Takeuchi, H., Asano, K., Kuo, C., Anderson, E., King, T., Bokor, J., and Hu, C., “FinFET – A Self-Aligned Double-Gate MOSFET Scalable to 20nm”, IEEE Trans. Electron Devices 47, 2320 (2000).Google Scholar
Blakey, P., “Transistor Modeling and TCAD”, IEEE Microwave Magazine, Vol 13-7, 28-35 (2012)CrossRefGoogle Scholar