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Chemical Vapor Deposition of Porous GaN Particles on Silicon

Published online by Cambridge University Press:  26 July 2012

Joan J. Carvajal ,
Oleksandr V. Bilousov ,
Dominique Drouin ,
Magdalena Aguiló ,
Francesc Díaz  and
J. Carlos Rojo
Joan J. Carvajal*
Affiliation:
Física i Cristallografia de Materials i Nanomaterials (FiCMA-FiCNA), Universitat Rovira i Virgili, Campus Sescelades, c/Marcel·lí Domingo s/n, 43007 Tarragona, Spain Department of Electrical and Computer Engineering, Université de Sherbrooke, Sherbrooke, Québec J1K 2R1, Canada
Oleksandr V. Bilousov
Affiliation:
Física i Cristallografia de Materials i Nanomaterials (FiCMA-FiCNA), Universitat Rovira i Virgili, Campus Sescelades, c/Marcel·lí Domingo s/n, 43007 Tarragona, Spain
Dominique Drouin
Affiliation:
Department of Electrical and Computer Engineering, Université de Sherbrooke, Sherbrooke, Québec J1K 2R1, Canada
Magdalena Aguiló
Affiliation:
Física i Cristallografia de Materials i Nanomaterials (FiCMA-FiCNA), Universitat Rovira i Virgili, Campus Sescelades, c/Marcel·lí Domingo s/n, 43007 Tarragona, Spain
Francesc Díaz
Affiliation:
Física i Cristallografia de Materials i Nanomaterials (FiCMA-FiCNA), Universitat Rovira i Virgili, Campus Sescelades, c/Marcel·lí Domingo s/n, 43007 Tarragona, Spain
J. Carlos Rojo
Affiliation:
Department of Materials Science and Engineering, State University of New York, Stony Brook, NY 11794, USA
*
Corresponding author. E-mail: [email protected]
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Abstract

We present a technique for the direct deposition of nanoporous GaN particles on Si substrates without requiring any post-growth treatment. The internal morphology of the nanoporous GaN particles deposited on Si substrates by using a simple chemical vapor deposition approach was investigated, and straight nanopores with diameters ranging between 50 and 100 nm were observed. Cathodoluminescence characterization revealed a sharp and well-defined near band-edge emission at ∼365 nm. This approach simplifies other methods used for this purpose, such as etching and corrosion techniques that can damage the semiconductor structure and modify its properties.

Keywords

III-nitrideschemical vapor depositionnanoporous semiconductorscathodoluminescencefocused ion beamsilicon technology
Type
Research Article
Information
Microscopy and Microanalysis , Volume 18 , Issue 4 , August 2012 , pp. 905 - 911
Copyright
Copyright © Microscopy Society of America 2012

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Footnotes

Currently at GE Global Research, Niskayuna, NY 12309, USA

References

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