Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-30T04:16:17.621Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterizing InGaAs/GaAs quantum dots using low-kV FESEM imaging and EDS analysis at the nanometer scale

Published online by Cambridge University Press:  25 July 2016

Fang Zhou ,
Luyang Han ,
Simon Burgess  and
Xiaobing Li
Fang Zhou
Affiliation:
Carl Zeiss Microscopy GmbH, Carl-Zeiss-StraBe 22, 73447 Oberkochen, Germany
Luyang Han
Affiliation:
Carl Zeiss Microscopy GmbH, Carl-Zeiss-StraBe 22, 73447 Oberkochen, Germany
Simon Burgess
Affiliation:
Oxford Instruments NanoAnalysis, Halifax Road, High Wycombe, Bucks HP12 3SE, UK
Xiaobing Li
Affiliation:
Oxford Instruments NanoAnalysis, Halifax Road, High Wycombe, Bucks HP12 3SE, UK

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Information
Microscopy and Microanalysis , Volume 22 , Supplement S3: Proceedings of Microscopy & Microanalysis 2016 , July 2016 , pp. 1586 - 1587
Copyright
© Microscopy Society of America 2016 

References

References:

[1] Michler, P., Kiraz, A., Becher, C., Schoenfeld, W. V., Petroff, P. M., Zhang, L., Hu, E. & Imamoglu, A. Science 290, pp. 2282 (2000).Google Scholar
[2] Burkard, G., Loss, D. & DiVincenzo, D. P. Phys. Rev. B 59, pp. 2070 (1999).Google Scholar
[3] Maniguet, L., Roussel, F., Martin, R., Djurado, E., Steil, M.C., Bichaud, E., Le Goff, A., Holzinger, M., Cosnier, S., Chaix, J.M. & Carry, C. Microscopy and Analysis, Nanotechnology Supplement Nov/Dec (pp. 4 (2015).Google Scholar