Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-26T05:58:15.347Z Has data issue: false hasContentIssue false

Characterization with TEM of AlN/GaN Heterostructures for Implant Activation Annealing

Published online by Cambridge University Press:  03 August 2008

TS Zheleva
Affiliation:
Army Research Laboratory
CE Hager
Affiliation:
Army Research Laboratory
KA Jones
Affiliation:
Army Research Laboratory
MA Derenge
Affiliation:
Army Research Laboratory
Get access

Extract

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

Type
Research Article
Copyright
© 2008 Microscopy Society of America

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)