Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-06T06:51:02.808Z Has data issue: false hasContentIssue false

Characterization of the Oxide-Semiconductor Interface in 4H-SiC/SiO2 Structures using TEM and XPS

Published online by Cambridge University Press:  23 September 2015

Joshua Taillon
Affiliation:
University of Maryland, Materials Science and Engineering, College Park, MD, USA
Karen Gaskell
Affiliation:
University of Maryland, Chemistry and Biochemistry, College Park, MD, USA
Gang Liu
Affiliation:
Rutgers University, Institute for Advanced Materials, New Brunswick, NJ, USA
Leonard Feldman
Affiliation:
Rutgers University, Institute for Advanced Materials, New Brunswick, NJ, USA
Sarit Dahr
Affiliation:
Auburn University, Physics, Auburn, AL, USA
Tsvetanka Zheleva
Affiliation:
US Army Research Laboratory, Sensors and Electron Devices Directorate, Adelphi, MD, USA
Aivars Lelis
Affiliation:
US Army Research Laboratory, Sensors and Electron Devices Directorate, Adelphi, MD, USA
Lourdes Salamanca-Riba
Affiliation:
University of Maryland, Materials Science and Engineering, College Park, MD, USA

Abstract

Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Copyright
Copyright © Microscopy Society of America 2015 

References

Reference:

[1] Cooper, J, et al, IEEE Trans. Electron Devices 49 (2002), p. 658.Google Scholar
[2] Jamet, P, Dimitrijev, S & Tanner, P, J. Appl. Phys. 90 (2001), p. 5058.Google Scholar
[3] Taillon, JA, et al, J. Appl. Phys. 113 (2013), p. 044517.Google Scholar
[4] Fenner, DB, Biegelsen, DK & Bringans, RD, J. Appl. Phys. 66 (1989), p. 419.CrossRefGoogle Scholar
[5] Liu, G, et al, IEEE Electron Device Lett. 34 (2013), p. 181.Google Scholar
[6] Senzaki, J, et al, IEEE Electron Device Lett. 23 (2002), p. 13.Google Scholar
[7] Dhar, S, et al, J. American Chemical Societty. 131 (2009), p. 16808.Google Scholar
[8] The authors gratefully acknowledge funding from ARL contracts W911NF-11-2-0044 and W911NF-07-2-0046. JAT additionally acknowledges funding through the NSF GRFP, grant DGE 1322106..Google Scholar