Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-23T16:18:56.727Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of GaN E-mode HEMT Devices by In-Situ STEM Electrical Biasing

Published online by Cambridge University Press:  22 July 2022

Abhas Mehta ,
Qingxiao Wang ,
Sam Shichijo  and
M.J. Kim
Abhas Mehta*
Affiliation:
University of Texas at Dallas, Material Science and Engineering, Richardson, TX, USA
Qingxiao Wang
Affiliation:
University of Texas at Dallas, Material Science and Engineering, Richardson, TX, USA King Abdullah University of Science and Technology, Thuwal, Saudi Arabia
Sam Shichijo
Affiliation:
University of Texas at Dallas, Electrical and Computer Engineering, Richardson, TX, USA
M.J. Kim*
Affiliation:
University of Texas at Dallas, Material Science and Engineering, Richardson, TX, USA
*
*Corresponding author: [email protected], [email protected]
*Corresponding author: [email protected], [email protected]

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Insights into Phase Transitions in Functional Materials by In Situ/Operando TEM: Experiment Meets Theory
Information
Microscopy and Microanalysis , Volume 28 , Supplement S1 , August 2022 , pp. 2276 - 2277
Check for updates
Copyright
Copyright © Microscopy Society of America 2022

References

Tallarico, AN et al. , IEEE Elec. Device Lett. 38(1) (2017), p. 99. https://doi.org/10.1109/LED.2016.2631640Google Scholar
Hilt, O et al. , Proc. 22nd Int. Symp. Power Semiconductor Devices IC's (ISPSD) (2010), p. 347.Google Scholar
Greco, G, Lucolano, F and Roccaforte, F, Mat. Sci. in Semiconductor Processing 78 (2018), p. 96. https://doi.org/10.1016/j.mssp.2017.09.027Google Scholar
Mei, G et al. , IEEE Electron Device Lett. 40(3) (2019), p. 379. https://doi.org/10.1109/LED.2019.2893290Google Scholar
He, J et al. , Appl. Phys. Lett. 116 (2020), p. 223502. https://doi-org.libproxy.utdallas.edu/10.1063/5.0007763Google Scholar
This work was supported by SRC TxACE, under the task 2810.057.Google Scholar