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Characterization of GaN E-mode HEMT Devices by In-Situ STEM Electrical Biasing

Published online by Cambridge University Press:  22 July 2022

Abhas Mehta ,
Qingxiao Wang ,
Sam Shichijo  and
M.J. Kim
Abhas Mehta*
Affiliation:
University of Texas at Dallas, Material Science and Engineering, Richardson, TX, USA
Qingxiao Wang
Affiliation:
University of Texas at Dallas, Material Science and Engineering, Richardson, TX, USA King Abdullah University of Science and Technology, Thuwal, Saudi Arabia
Sam Shichijo
Affiliation:
University of Texas at Dallas, Electrical and Computer Engineering, Richardson, TX, USA
M.J. Kim*
Affiliation:
University of Texas at Dallas, Material Science and Engineering, Richardson, TX, USA
*
*Corresponding author: [email protected], [email protected]
*Corresponding author: [email protected], [email protected]

Abstract

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Type
Insights into Phase Transitions in Functional Materials by In Situ/Operando TEM: Experiment Meets Theory
Information
Microscopy and Microanalysis , Volume 28 , Supplement S1 , August 2022 , pp. 2276 - 2277
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Copyright
Copyright © Microscopy Society of America 2022

References

Tallarico, AN et al. , IEEE Elec. Device Lett. 38(1) (2017), p. 99. https://doi.org/10.1109/LED.2016.2631640Google Scholar
Hilt, O et al. , Proc. 22nd Int. Symp. Power Semiconductor Devices IC's (ISPSD) (2010), p. 347.Google Scholar
Greco, G, Lucolano, F and Roccaforte, F, Mat. Sci. in Semiconductor Processing 78 (2018), p. 96. https://doi.org/10.1016/j.mssp.2017.09.027Google Scholar
Mei, G et al. , IEEE Electron Device Lett. 40(3) (2019), p. 379. https://doi.org/10.1109/LED.2019.2893290Google Scholar
He, J et al. , Appl. Phys. Lett. 116 (2020), p. 223502. https://doi-org.libproxy.utdallas.edu/10.1063/5.0007763Google Scholar
This work was supported by SRC TxACE, under the task 2810.057.Google Scholar