Characterization of Defect Formation during Ni Silicidation for CMOS Device Application

K-S Ko; S Crank; P Chen; D Yue; S Lavangkul; H Mogul; S Siddiqui; T Bonifield

doi:10.1017/S1431927605509632

Characterization of Defect Formation during Ni Silicidation for CMOS Device Application

Published online by Cambridge University Press: 01 August 2005

K-S Ko ,

S Crank ,

P Chen ,

D Yue ,

S Lavangkul ,

H Mogul ,

S Siddiqui and

T Bonifield

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K-S Ko: Affiliation:
Texas Instruments
S Crank: Affiliation:
Texas Instruments
P Chen: Affiliation:
Texas Instruments
D Yue: Affiliation:
Texas Instruments
S Lavangkul: Affiliation:
Texas Instruments
H Mogul: Affiliation:
Texas Instruments
S Siddiqui: Affiliation:
Texas Instruments
T Bonifield: Affiliation:
Texas Instruments

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Extended abstract of a paper presented at Microscopy and Microanalysis 2005 in Honolulu, Hawaii, USA, July 31--August 4, 2005

Type: Research Article
Information: Microscopy and Microanalysis , Volume 11 , Issue S02 , August 2005 , pp. 2096 - 2097

DOI: https://doi.org/10.1017/S1431927605509632 [Opens in a new window]

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Characterization of Defect Formation during Ni Silicidation for CMOS Device Application

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