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The Case For 0.1eV EELS in a 1Å STEM

Published online by Cambridge University Press:  02 July 2020

R.E. Batson
R.E. Batson*
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY10598
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Extract

Semiconductor devices are rapidly heading towards nanometer sizes, with dielectric gate oxides already in the 2-3nm thickness range and transistor channel lengths of order 10-20nm. There is good reason to believe, therefore, that physical limits imposed by atomic level granularity will dominate operation of semiconductor devices in the future. Thus, recent work has identified a physical limit for the thickness of SiO2 in order to maintain its insulating character. [1] On the other hand, new opportunities are created, based on new behavior at the atomic level. In the presence of very high local electric fields, for instance, the local electronic structure can change from insulating to conductive, forming a very small, very fast “Mott” transistor. [2] In a single molecule having a localized electronic level which is positioned well with respect to a conducting environment, single electron transistor operation may be possible at room temperature. [3]

Type
The Theory and Practice of Scanning Transmission Electron Microscopy
Information
Microscopy and Microanalysis , Volume 6 , Issue S2: Proceedings: Microscopy & Microanalysis 2000, Microscopy Society of America 58th Annual Meeting, Microbeam Analysis Society 34th Annual Meeting, Microscopical Society of Canada/Societe de Microscopie de Canada 27th Annual Meeting, Philadelphia, Pennsylvania August 13-17, 2000 , August 2000 , pp. 108 - 109
Copyright
Copyright © Microscopy Society of America

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References

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